ZPTP89 ZPTP89B
ZPTP89B is a high-speed, high-sensitivity NPN silicon phototransistor molded in a standard φ2 mm package. Its clear epoxy makes it sensitive to visible and near-infrared radiation. Package dimensions. Notes: all dimensions are in millimeters; unless otherwise specified, dimensional tolerances are ±0.3mm. Electro-optical characteristics. Absolute maximum ratings.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Power Power Dissipation Pd [Absolute Maximum Ratings ;Ta=25℃] | 75 mW |
| Collector-Emitter Voltage VCEO [Absolute Maximum Ratings ;Ta=25℃] | 30 V |
| Emitter-Collector Voltage VECO [Absolute Maximum Ratings ;Ta=25℃] | 5 V |
| Operating Temperature Operating Temperature Topr [Absolute Maximum Ratings ;Ta=25℃] | -25~+85 ℃ |
| Storage Temperature Tstg [Absolute Maximum Ratings ;Ta=25℃] | -40~+100 ℃ |
| Lead Soldering Temperature Tsol [Absolute Maximum Ratings; Ta=25℃; <10s (In Table); Footnote: Solder for No More Than5s at Least2mm from the Encapsulant] | 260 ℃ |
| Collector-Emitter Breakdown Voltage BVCEO [Optoelectronic Characteristics ；Ta=25℃；IC=100μA；Ee=0mW/cm²] | min ：30 |
| Emitter-Collector Breakdown Voltage BVECO [Optoelectronic Characteristics ；Ta=25℃；IC=100μA；Ee=0mW/cm²] | min ：5 |
| Collector-Emitter Saturation Voltage VCE(SAT) [Optoelectronic Characteristics ；Ta=25℃；IC=100μA；Ee=0mW/cm²] | max ：0.4 |
| Rise Time tr [Optoelectronic Characteristics ；Ta=25℃；VCE=5V；IC=1mA；RL=1000Ω] | typical ：15 |
| Fall Time tf [Optoelectronic Characteristics ；Ta=25℃；VCE=5V；IC=1mA；RL=1000Ω] | typical ：15 |
| Collector-Dark Current Collector Dark Current ICEO [Optoelectronic Characteristics ；Ta=25℃；Ee=0mW/cm²；VCE=20V] | max ：100 |
| Photogenerated Current / On State Collector Current IC(ON) [Optoelectronic Characteristics ；Ta=25℃；Ee=0.555mW/cm²；VCE=5V] | typical ：0.5 |
| Peak Wavelength λ0.5 [Optoelectronic Characteristics ；Ta=25℃] | min ：700； max ：1100 |
| Spectral Bandwidth λP [Optoelectronic Characteristics ；Ta=25℃] | typical ：940 |
| Packing Specification | 32 pieces/strip; 50 strips/bundle |
Applications
Key Features
Datasheet
Supplier Information
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ZPTP88B is a high-speed, high-sensitivity NPN silicon phototransistor molded in a standard φ2 mm package. Its clear epoxy makes it sensitive to visible and near-infrared radiation.
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