NL8588-02 Large-Spot Collimated Light
NL8588-02 is a surface-mount light-emitting device with a large spot and parallel output. The supplied PDF introduction describes NL8588-02 as a high-power infrared LED light source with high parallelism and a large light spot.
Specification Snapshot
Forward Current I_F [Maximum Ratings;Ta=25°C]
100 mA
Operating Temperature Topr. [Maximum Ratings;Ta=25°C]
-25~+90 °C
Storage Temperature Tstg. [Maximum Ratings;Ta=25°C]
-30~+100 °C
Forward Voltage Drop V_F [Electro-Optical Characteristics;Ta=25°C;I_F=20mA]
typical:1.4 V; max:1.8 V
Output Power P_O [Electro-Optical Characteristics;Ta=25°C;I_F=20mA]
typical:2.8 mW
Peak Wavelength λ_P [Electro-Optical Characteristics;Ta=25°C;I_F=20mA]
typical:850 nm
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Overview
NL8588-02 is a surface-mount light-emitting device with a large spot and parallel output. The supplied PDF introduction describes NL8588-02 as a high-power infrared LED light source with high parallelism and a large light spot.
Specifications
| Parameter | Value |
|---|---|
| Spot Size [Features on Page 1] | 8 mm |
| Forward Current I_F [Maximum Ratings;Ta=25°C] | 100 mA |
| Reverse Voltage V_R [Maximum Ratings;Ta=25°C] | 5 V |
| Operating Temperature Topr. [Maximum Ratings;Ta=25°C] | -25~+90 °C |
| Storage Temperature Tstg. [Maximum Ratings;Ta=25°C] | -30~+100 °C |
| Soldering Temperature Tsol. [Maximum Ratings;Ta=25°C] | 260 °C |
| Forward Voltage Drop V_F [Electro-Optical Characteristics;Ta=25°C;I_F=20mA] | typical:1.4 V; max:1.8 V |
| Reverse Current I_R [Electro-Optical Characteristics;Ta=25°C;V_R=5V] | max:10 μA |
| Output Power P_O [Electro-Optical Characteristics;Ta=25°C;I_F=20mA] | typical:2.8 mW |
| Peak Wavelength λ_P [Electro-Optical Characteristics;Ta=25°C;I_F=20mA] | typical:850 nm |
| Half-Width Δλ [Electro-Optical Characteristics;Ta=25°C;I_F=20mA] | typical:35 nm |
| Half-Value Angle Δθ [Electro-Optical Characteristics;Ta=25°C;I_F=20mA] | typical:±2.5 deg. |
Applications
Optical Encoders,Grating Scales,Instruments,Semiconductor Equipment;Optical Sensors;Servo Systems
Key Features
High Collimation:Divergence+/-2.5°;Large7~8mm Illuminated Spot with Uniform Intensity;Surface-Mount,Hermetic,Highly Reliable;High Power;Peak Wavelength850nm
Datasheet
Product Datasheet
PDF
Supplier Information
Shanghai Enbi Technology Co., Ltd., founded in 2016, focuses on optoelectronic technology R&D and production. Based on optoelectronic semiconductor discrete devices, it integrates optics, MEMS, electronics, microelectronics, semiconductor optoelectronic IC technologies, covering components, optoelectronic ICs, sensor modules, with full capability from chip design to module mass production, holding independent IP and unique testing systems. The company has an excellent management team and skilled staff, rich industry experience, strong R&D, efficient mass production and strict quality control, providing high-performance, reliable, cost-effective products; for special applications, we offer optimal optoelectronic solutions and custom products. Since its establishment, the company insists on independent innovation, quality first, continuously launching innovative products widely used in industrial equipment, automotive electronics, laser ranging, healthcare, instrumentation, security monitoring, smart home, etc., with performance replacing high-end foreign brands. Enbi Technology actively deploys in IoT, intelligent society, AI, driving industry upgrades, aiming to become a high-end optoelectronic brand.
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