800G/1.6T Thin Film LiNbO3 Modulator Chip（DR8）
800G/1.6T integrated chip based on thin-film lithium niobate. Driven single-ended by a DSP or EAM driver. Integrate the following components: 1. Integrated 1x8 beam splitter (DR8) 2. Eight-way MZM modulator 3. Input and output optical power monitoring PD 4. Mode spot conversion SSC 5.On-chip 50 ohm matching resistor
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Overview
Specifications
| Parameter | Value |
|---|---|
| Chip Size（DR8） | 5 mm × 11.5 mm |
| Vpp requirements（ER>4dB） | 1.2V |
| RF bandwidth | >67GHz |
| Single MZM insertion loss | <4.5dB |
| extinction ratio | >20dB |
| half-wave voltage [@100khz] | <2.8V(@100khz) |
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Datasheet
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