Thin-film Lithium Niobate MZ Modulator (IO) ORI-MZM-T-20
Based on state-of-art Lithium Niobate on insulator (LNOI) technology, this intensity modulator inherits most of the advantages of traditional lithium niobate modulators, and has a miniature form factor, low driving voltage and low loss. ORI-MZM-T-BW is the thermal tuning version, whose phase shift is tuned by micron heaters integrated on chip. Compared to traditional LN modulators, the heater version could maintain a lot more stable bias point throughout lifetime of the device. The device is a hermetic sealing package with internal optical power, which save more space size for the end user. The low RIN laser source is also integrated in the package. Two MPD’s are included for power monitoring purpose. One PD is used to monitor the laser output power and the other is to monitor the MZ bias point.
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Overview
Specifications
| Parameter | Value |
|---|---|
| RF Vπ @ 1kHz V_(pi_RF) | typical:3.3 V; max:3.5 V |
| RF Vπ @ 1GHz V_(pi_RF) | max:4 V |
| Electro-optical 3-dB Bandwidth BW | min:20 GHz |
| Electrical return loss (f<40GHz) | max:-10 dB |
| Characteristic impedance Z_(c) | typical:50 Ohm |
| Heater resistance | min:80 Ohm; max:400 Ohm |
| DC tuning Pπ P_(π_DC) | min:45 mW; typical:55 mW; max:70 mW |
| LD operating current If | typical:300 mA; max:400 mA |
| LD Forward Voltage Vr | min:1.2 V; max:2 V |
| Relative Intensity Noise RIN [Between 100MHz to 20GHz, with If=400 mA, -40dB reflection] | typical:-155 dB/Hz |
| Thermistor resistance Rth | min:9.5 KΩ; typical:10 KΩ; max:10.5 KΩ |
| TEC Current Itec | max:1.2 A |
| TEC Voltage Vtec | max:8.8 V |
| Output power（If=400mA) OP | min:12 dBm; typical:13 dBm |
| DC Extinction ratio ER | min:20 dB |
| Wavelength range | min:1535 nm; typical:1550 nm; max:1565 nm |
| MPD1 Photocurrent (If=40mA) | min:0.02 mA |
| MPD2 Photocurrent (If=40mA) | min:0.1 mA |
Applications
Key Features
Datasheet
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