1.6T DR8 Thin-film Lithium Niobate Mach-Zehnder Modulator Chip
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Specifications
| Parameter | Value |
|---|---|
| Storage temperature Ts | min:-40 °C; max:85 °C |
| Storage Relative humidity RH | min:0 %; max:90 % |
| Operating temperature | min:-10 ℃; max:85 ℃ |
| RF electrode maximum Voltage V_(RF) | max:4 V |
| Heater maximum current | max:30 mA |
| Heater maximum voltage | max:8 V |
| RF Vpi V_(pi_RF) | typical:2.8 V; max:3 V |
| Insertion loss IL [Modulation loss not included. Assume 1.25dB coupling loss per facet, 9.5 dB splitting loss. Without modulation, at in-phase condition, 3dB modulator loss. 1.25*2+9.5+3=15 dB.] | max:15.5 dB |
| IL Uniformity D_(IL) | max:1.5 dB |
| Electro-optical 3-dB Bandwidth BW | min:67 GHz |
| Characteristic impedance Z_(c) | min:45 Ohm; typical:50 Ohm; max:55 Ohm |
| Heater resistance | min:180 Ohm; typical:220 Ohm; max:260 Ohm |
| Thermal tuning Ppi P_(pi_th) | typical:50 mW/π; max:60 mW/π |
| Wavelength range | min:1300 nm; typical:1310 nm; max:1320 nm |
| Optical Extinction ratio OER | min:20 dB; typical:25 dB |
| Optical Return Loss RL | min:26 dB |
| Input and output mode diameter | min:3.5 μm; typical:4 μm |
| Input MPD splitter ratio | min:0.5 %; typical:1.5 %; max:2 % |
| Output MPD splitter ratio | min:15 %; typical:20 %; max:25 % |
Key Features
Datasheet
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