RIO ORION™ Series 1550nm Low Phase Noise Narrow Linewidth Laser Module
The ORION™ devices are compact laser modules employing the RIO high-performance External Cavity Laser (ECL). This laser design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, forming a laser cavity with significant advantages. The ORION™ modules provide a stable, self-contained, easy-to-use alternative to complicated, environmentally sensitive and expensive fiber laser sources, or other narrow linewidth laser alternatives. The ORION™ module uses reliable, Telcordia qualified and industry proven components, and employs low noise, digital laser bias current and temperature control circuitry to set and monitor laser performance. External monitoring and control can be accomplished via standard interfaces, using RIO-supplied software. The ORION™ module is an ideal source for commercial and other fiber optic sensing applications, such as interferometric and Brillouin DTSS systems for oil & gas, security and smart infrastructure monitoring, coherent Doppler LIDAR for wind measurements, coherent and heterodyne metrology, photonic velocimetry and vibrometry, and coherent communications.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Storage Temperature [Absolute Maximum Ratings] | -40 to +85 ℃ |
| Max. Module Supply Voltage [Absolute Maximum Ratings] | 5.5 V |
| Max. ESD-susceptibility [Absolute Maximum Ratings] | 500 V |
| Min. Fiber Bend Radius [Absolute Maximum Ratings] | 35 mm |
| Max. Tensile Strength, Fiber to the Package [Absolute Maximum Ratings] | 5 N |
| Typ. Power Stability over Case Temperature Range dP_out [At recommended TEC set temperature Tₛ and bias current I_b；0 to +70 ℃] | ±10 % |
| Typ. Wavelength Stability over Case Temperature Range dλ [At recommended TEC set temperature Tₛ and bias current I_b；0 to +70 ℃] | ±10 pm |
| Typ. Power Stability over Case Temperature Range dP_out [At recommended TEC set temperature Tₛ and bias current I_b；+10 to +55 ℃] | ±5 % |
| Typ. Wavelength Stability over Case Temperature Range dλ [At recommended TEC set temperature Tₛ and bias current I_b；+10 to +55 ℃] | ±5 pm |
| Max. Power Stability over Case Temperature Range dP_out [At recommended TEC set temperature Tₛ and bias current I_b; ≤ ±1 ℃] | ±0.3 % |
| Max. Wavelength Stability over Case Temperature Range dλ [At recommended TEC set temperature Tₛ and bias current I_b; ≤ ±1 ℃] | ±0.5 pm |
| Center Wavelength (ITU Grid) λ [At recommended TEC set temperature Tₛ and bias current I_b；±40 pm standard] | 1530–1565 nm |
| Min. Wavelength Tuning Range Δλ_T [Recommended TEC setpoint Tₛ and bias current I_b; phase-continuous TEC temperature tuning; some performance parameters change over range; asymmetric minimum +10 to -20 pm; custom extension up to ±45 pm] | 30 pm |
| Typ. Frequency Stability ν_t1 [At recommended TEC set temperature Tₛ and bias current I_b；Free running over 1 hour(s)；After 1 hour stabilization；heterodyning two lasers at constant case temperature] | ±2 MHz |
| Max. Frequency Stability ν_t1 [At recommended TEC set temperature Tₛ and bias current I_b；Free running over 1 hour(s)；After 1 hour stabilization；heterodyning two lasers at constant case temperature] | ±4 MHz |
| Typ. Frequency Stability ν_t8 [At recommended TEC set temperature Tₛ and bias current I_b；Free running over 8 hour(s)；After 1 hour stabilization；heterodyning two lasers at constant case temperature] | ±3 MHz |
| Max. Frequency Stability ν_t8 [At recommended TEC set temperature Tₛ and bias current I_b；Free running over 8 hour(s)；After 1 hour stabilization；heterodyning two lasers at constant case temperature] | ±6 MHz |
| Max. Relative Intensity Noise RIN [At recommended TEC set temperature Tₛ and bias current I_b；≥1 kHz] | -140 dB/Hz |
| Relative Intensity Noise RIN [At recommended TEC set temperature Tₛ and bias current I_b；≥500 kHz] | Shot noise limited |
| Min. Side Mode Suppression Ratio SMSR [At recommended TEC set temperature Tₛ and bias current I_b；CW at specified P_out] | 40 dB |
| Min. Optical S/N Ratio [At recommended TEC set temperature Tₛ and bias current I_b；From spontaneous noise levels at ±1 nm from λ] | 60 dB |
| Min. Polarization Extinction Ratio PER [At recommended TEC set temperature Tₛ and bias current I_b；PM-fiber PANDA option；polarization and connector key aligned to slow axis] | 20 dB |
| Min. Optical Isolation ISO [At recommended TEC set temperature Tₛ and bias current I_b] | 40 dB |
| Voltage Supply V_cc [At recommended TEC set temperature Tₛ and bias current I_b] | 4.75–5.25 V |
| Typ. Voltage Supply V_cc [At recommended TEC set temperature Tₛ and bias current I_b] | 5 V |
| Frequency Modulation Bandwidth f_mL [LF；RIO01XX- & RIO03XX-；Sinusoidal modulation；via pin4 of ORION D-9] | DC–100 |
| Min. Frequency Tuning Efficiency η_mL [LF; RIO01XX- & RIO03XX-; sinusoidal modulation at 10 kHz; regular specification; grade4/5 alternative minimum20; efficiency varies over bandwidth] | 25 MHz/V |
| Typ. Frequency Tuning Efficiency η_mL [LF；RIO01XX- & RIO03XX-；Sinusoidal modulation at 10 kHz；efficiency varies over bandwidth] | 50 MHz/V |
| Min. Frequency Tuning Efficiency η_mL [LF；RIO01XX- & RIO03XX-；Grade4 or Grade5 phase noise spec；Sinusoidal modulation at 10 kHz；efficiency varies over bandwidth] | 20 MHz/V |
| Tuning Voltage Magnitude V_tuneL [LF；RIO01XX- & RIO03XX-；via pin4 of ORION D-9] | -4 to +4 V |
| Typ. Output Power Modulation Index M_L [LF；RIO01XX- & RIO03XX-；Sinusoidal modulation at 10 kHz；wavelength tuning100 MHz p-p；FM also modulates output power] | 5 % |
| Max. Output Power Modulation Index M_L [LF; RIO01XX- & RIO03XX-; regular specification; sinusoidal modulation at 10 kHz; wavelength tuning100 MHz p-p; grade4/5 alternative maximum15] | 10 % |
| Max. Output Power Modulation Index M_L [LF；RIO01XX- & RIO03XX-；Grade4 or Grade5 phase noise spec；Sinusoidal modulation at 10 kHz；wavelength tuning100 MHz p-p] | 15 % |
| Frequency Modulation Bandwidth f_mH [HF；RIO03XX- only；Sinusoidal modulation, AC coupled；via50 Ω SMC connector] | 0.01–200 MHz |
| Typ. Frequency Modulation Bandwidth f_mH [HF；RIO03XX- only；Sinusoidal modulation, AC coupled] | 100 MHz |
| Min. Frequency Tuning Efficiency η_mH [HF；RIO03XX- only；Sinusoidal modulation at 20 kHz；efficiency varies over bandwidth] | 100 MHz/V |
| Typ. Frequency Tuning Efficiency η_mH [HF；RIO03XX- only；Sinusoidal modulation at 20 kHz；efficiency varies over bandwidth] | 200 MHz/V |
| Min. Frequency Tuning Efficiency η_mH [HF；RIO03XX- only；Sinusoidal modulation at 500 kHz；efficiency varies over bandwidth] | 25 MHz/V |
| Typ. Frequency Tuning Efficiency η_mH [HF；RIO03XX- only；Sinusoidal modulation at 500 kHz；efficiency varies over bandwidth] | 50 MHz/V |
| Min. Frequency Tuning Efficiency η_mH [HF；RIO03XX- only；Sinusoidal modulation at 20–200 MHz；efficiency varies over bandwidth] | 50 MHz/V |
| Typ. Frequency Tuning Efficiency η_mH [HF；RIO03XX- only；Sinusoidal modulation at 20–200 MHz；efficiency varies over bandwidth] | 100 MHz/V |
| Max. Tuning Voltage Magnitude V_tuneH [HF；RIO03XX- only；AC coupled；SMC input] | 1 V_p-p |
| Max. Output Power Modulation Index M_H [HF；RIO03XX- only；Sinusoidal modulation at100 MHz；wavelength tuning100 MHz p-p；FM also modulates output power] | 4 % |
| Spectral Linewidth, FWHM Δλ_L [Grade1；Lorentzian linewidth model；At recommended TEC set temperature Tₛ and bias current I_b] | ≤15 kHz |
| Typ. Phase Noise PhN [Grade1；@10 Hz；1m OPD in SM fiber；RIO interferometric test setup；At recommended TEC set temperature Tₛ and bias current I_b] | 123 μrad/rt-Hz |
| Typ. Phase Noise PhN [Grade1；@200 Hz；1m OPD in SM fiber；RIO interferometric test setup；At recommended TEC set temperature Tₛ and bias current I_b] | 22 μrad/rt-Hz |
| Spectral Linewidth, FWHM Δλ_L [Grade3；Lorentzian linewidth model；At recommended TEC set temperature Tₛ and bias current I_b] | ≤5 kHz |
| Typ. Phase Noise PhN [Grade3；@10 Hz；1m OPD in SM fiber；RIO interferometric test setup；At recommended TEC set temperature Tₛ and bias current I_b] | 41 μrad/rt-Hz |
| Typ. Phase Noise PhN [Grade3；@200 Hz；1m OPD in SM fiber；RIO interferometric test setup；At recommended TEC set temperature Tₛ and bias current I_b] | 8 μrad/rt-Hz |
| Spectral Linewidth, FWHM Δλ_L [Grade4；Lorentzian linewidth model；At recommended TEC set temperature Tₛ and bias current I_b] | ≤2 kHz |
| Typ. Phase Noise PhN [Grade4；@10 Hz；1m OPD in SM fiber；RIO interferometric test setup；At recommended TEC set temperature Tₛ and bias current I_b] | 20 μrad/rt-Hz |
| Typ. Phase Noise PhN [Grade4；@200 Hz；1m OPD in SM fiber；RIO interferometric test setup；At recommended TEC set temperature Tₛ and bias current I_b] | 4 μrad/rt-Hz |
| Spectral Linewidth, FWHM Δλ_L [Grade5；10 mW output power version only；Lorentzian linewidth model；At recommended TEC set temperature Tₛ and bias current I_b] | ≤1 kHz |
| Typ. Phase Noise PhN [Grade5；10 mW output power version only；@10 Hz；1m OPD in SM fiber；RIO interferometric test setup；At recommended TEC set temperature Tₛ and bias current I_b] | 10 μrad/rt-Hz |
| Typ. Phase Noise PhN [Grade5；10 mW output power version only；@200 Hz；1m OPD in SM fiber；RIO interferometric test setup；At recommended TEC set temperature Tₛ and bias current I_b] | 2 μrad/rt-Hz |
| Operating Temperature Range T_c [Case；custom range available upon request] | 0 to +70 ℃ |
| Typ. Power Dissipation P_dt [At50 ℃ case temperature] | 4 W |
| Max. Power Dissipation P_d [Over case temperature range] | 6 W |
| Max. Total Current I_max [Over case temperature range] | 1.5 A |
| Optical Connector [A；pigtailed fiber] | FC/APC |
| Interface Connector [B；power supply/external monitoring/control] | D-9 Female |
| Interface Pin 1 [SPI/RS-232/RS-485；4.75 V Min,5.25 V Max；Regulated,Low noise <100 mVp-p] | Vcc +5V |
| Interface Pin 2 [SPI] | MISO (output) |
| Interface Pin 2 [RS-232] | Tx |
| Interface Pin 2 [RS-485] | Data +; 1 kΩ diff impedance |
| Interface Pin 3 [SPI] | MOSI (input) |
| Interface Pin 3 [RS-232] | Rx |
| Interface Pin 3 [RS-485] | Data -; 1 kΩ diff impedance |
| Interface Pin 4 [SPI/RS-232/RS-485；1 kΩ impedance] | Modulation (input) |
| Interface Pin 5 [SPI/RS-232/RS-485] | GND |
| Interface Pin 6 [SPI/RS-232/RS-485；Active low (Ready)；needs external pull up] | /Ready-Warning (output) |
| Interface Pin 7 [SPI；RS-232/RS-485 Not used] | /SPI SS (input) |
| Interface Pin 8 [SPI；RS-232/RS-485 Not used] | SPI CLK (input) |
| Interface Pin 9 [SPI/RS-232/RS-485；12K internal pull up to Vcc；active low] | /Enable (input) |
| Interface Configuration [SPI] | 4-wire SPI slave; MSB first; bit rate ≤2 MHz; MISO/MOSI 3.3V drive, TTL compatible; data centered on rising clk; /SS active low; CLK idle low, data clocked on rising edge |
| Interface Configuration [RS-232] | 9600 Baud; 8 Data Bits; No Parity Bit; 1 Stop Bit; No Flow Control; TTL asynchronous serial option available at request |
| Interface Configuration [RS-485] | 9600 Baud; 8 Data Bits; No Parity Bit; 1 Stop Bit; No Flow Control |
| RF Connector [C；option RIO03XX- only] | SMC female, 50 Ω |
| Housing Material [Page 5 separate text] | Electroless Nickel-plated Aluminum |
Applications
Key Features
Datasheet
Supplier Information
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