RIO GRANDE 1550nm High Power Low Phase Noise Narrow Linewidth Laser Module
The RIO GRANDE devices are high power laser modules employing the RIO high-performance External Cavity Laser (ECL). This laser design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, forming a laser cavity with significant advantages. RIO high power narrow linewidth laser is integrated with high performance low noise EDFA. It provides narrow linewidth, low phase noise, ultra-low RIN, high output power and exceptionally reliable performance. An integrated RS232 interface enables easy control, diagnostic functions and data acquisition. The RIO high power module is an ideal candidate for OEM commercial and military fiber optic sensing, such as interferometric and Brillouin sensing systems for oil & gas, security, and also for metrology, LIDAR and other applications.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Storage Temperature [Absolute Maximum Ratings] | -40 to +85 ℃ |
| Module Supply Voltage [Absolute Maximum Ratings] | 11.5–12.5 V |
| Max. ESD-susceptibility [Absolute Maximum Ratings] | 500 V |
| Min. Fiber Bend Radius [Absolute Maximum Ratings] | 35 mm |
| Max. Tensile Strength, Fiber to the Package [Absolute Maximum Ratings] | 5 N |
| Humidity [Absolute Maximum Ratings；Non condensing] | 5–95 % |
| Max. Power Stability (rms) dP_out_s [At room temperature25 ℃ unless noted otherwise；after min5 min warm up；Over8 hrs；room25 ±1 ℃] | 1 % |
| Power Drift dP_out_d [At room temperature25 ℃ unless noted otherwise；after min5 min warm up；from output power at room temperature over case temperature range] | -5 to +5 % |
| Center Wavelength (ITU grid) λ [At room temperature25 ℃ unless noted otherwise；after min5 min warm up；±40 pm standard；custom center/build tolerance within1530–1565 available upon request] | 1541–1565 nm |
| Output Power Adjustment Range P_outT [At room temperature25 ℃ unless noted otherwise；after min5 min warm up；vs.rated output power] | 10–100 % |
| Typ. Wavelength Stability dλ [At room temperature25 ℃ unless noted otherwise；after min5 min warm up；Over case temperature range] | ±10 pm |
| Max. Relative Intensity Noise RIN [At room temperature25 ℃ unless noted otherwise；after min5 min warm up；≥100 Hz；2 mW input power to OE converter] | -110 dB/Hz |
| Max. Relative Intensity Noise RIN [At room temperature25 ℃ unless noted otherwise；after min5 min warm up；≥10 kHz；2 mW input power to OE converter] | -125 dB/Hz |
| Typ. Relative Intensity Noise RIN [At room temperature25 ℃ unless noted otherwise；after min5 min warm up；≥800 kHz up to50 MHz；2 mW input power to OE converter] | -157 dB/Hz |
| Max. Relative Intensity Noise RIN [At room temperature25 ℃ unless noted otherwise；after min5 min warm up；≥800 kHz up to50 MHz；2 mW input power to OE converter] | -155 dB/Hz |
| Min. Side Mode Suppression Ratio SMSR [At room temperature25 ℃ unless noted otherwise；after min5 min warm up；CW at specified P_out] | 40 dB |
| Typ. Side Mode Suppression Ratio SMSR [At room temperature25 ℃ unless noted otherwise；after min5 min warm up；CW at specified P_out] | 50 dB |
| Min. Optical S/N Ratio OSNR [At room temperature25 ℃ unless noted otherwise；after min5 min warm up；ASE levels at±1 nm from λ；0.05 nm resolution] | 55 dB |
| Max. Beam Quality BQ [At room temperature25 ℃ unless noted otherwise；after min5 min warm up] | 1.1 M² |
| Min. Polarization Extinction Ratio PER [At room temperature25 ℃ unless noted otherwise；after min5 min warm up；PM option；polarization and connector key aligned to slow axis] | 20 dB |
| Min. Optical Isolation ISO [At room temperature25 ℃ unless noted otherwise；after min5 min warm up] | 30 dB |
| Voltage Supply V_cc [At room temperature25 ℃ unless noted otherwise；after min5 min warm up] | 11.5–12.5 V |
| Typ. Voltage Supply V_cc [At room temperature25 ℃ unless noted otherwise；after min5 min warm up] | 12 V |
| Typ. Frequency Stability ν_t1 [At room temperature25 ℃ unless noted otherwise；after min5 min warm up；Free running over1 hour(s)；after1 hour stabilization；heterodyning two lasers at constant case temperature] | ±2 MHz |
| Max. Frequency Stability ν_t1 [At room temperature25 ℃ unless noted otherwise；after min5 min warm up；Free running over1 hour(s)；after1 hour stabilization；heterodyning two lasers at constant case temperature] | ±4 MHz |
| Typ. Frequency Stability ν_t8 [At room temperature25 ℃ unless noted otherwise；after min5 min warm up；Free running over8 hour(s)；after1 hour stabilization；heterodyning two lasers at constant case temperature] | ±3 MHz |
| Max. Frequency Stability ν_t8 [At room temperature25 ℃ unless noted otherwise；after min5 min warm up；Free running over8 hour(s)；after1 hour stabilization；heterodyning two lasers at constant case temperature] | ±6 MHz |
| Frequency Modulation Bandwidth f_mL [Modulation；via pin17 of RIO GRANDE D-25；frequency modulation leads to modulation of output power；Sinusoidal modulation] | DC–100 |
| Min. Frequency Tuning Efficiency η_mL [Modulation; via pin17 of RIO GRANDE D-25; frequency modulation leads to modulation of output power; sinusoidal at10 kHz; standard specification; grade4/5L alternative: minimum20; efficiency varies over bandwidth] | 25 MHz/V |
| Typ. Frequency Tuning Efficiency η_mL [Modulation；via pin17 of RIO GRANDE D-25；frequency modulation leads to modulation of output power；Sinusoidal at10 kHz；efficiency varies over bandwidth] | 50 MHz/V |
| Min. Frequency Tuning Efficiency η_mL [Modulation；via pin17 of RIO GRANDE D-25；frequency modulation leads to modulation of output power；Grade4 or Grade5L；Sinusoidal at10 kHz；efficiency varies over bandwidth] | 20 MHz/V |
| Tuning Voltage Magnitude V_tuneL [Modulation；via pin17 of RIO GRANDE D-25；frequency modulation leads to modulation of output power] | -4 to +4 V |
| Spectral Linewidth, FWHM Δλ_L [Grade1；Lorentzian linewidth model] | ≤15 kHz |
| Typ. Phase Noise PhN [Grade1；@10 Hz；1m OPD in SM fiber；RIO interferometric test setup] | 123 μrad/rt-Hz |
| Typ. Phase Noise PhN [Grade1；@200 Hz；1m OPD in SM fiber；RIO interferometric test setup] | 22 μrad/rt-Hz |
| Spectral Linewidth, FWHM Δλ_L [Grade3；Lorentzian linewidth model] | ≤5 kHz |
| Typ. Phase Noise PhN [Grade3；@10 Hz；1m OPD in SM fiber；RIO interferometric test setup] | 41 μrad/rt-Hz |
| Typ. Phase Noise PhN [Grade3；@200 Hz；1m OPD in SM fiber；RIO interferometric test setup] | 8 μrad/rt-Hz |
| Spectral Linewidth, FWHM Δλ_L [Grade4；Lorentzian linewidth model] | ≤2 kHz |
| Typ. Phase Noise PhN [Grade4；@10 Hz；1m OPD in SM fiber；RIO interferometric test setup] | 20 μrad/rt-Hz |
| Typ. Phase Noise PhN [Grade4；@200 Hz；1m OPD in SM fiber；RIO interferometric test setup] | 4 μrad/rt-Hz |
| Spectral Linewidth, FWHM Δλ_L [Grade5L；Lorentzian linewidth model] | ≤1 kHz |
| Typ. Phase Noise PhN [Grade5L；@10 Hz；1m OPD in SM fiber；RIO interferometric test setup] | 20 μrad/rt-Hz |
| Typ. Phase Noise PhN [Grade5L；@200 Hz；1m OPD in SM fiber；RIO interferometric test setup] | 4 μrad/rt-Hz |
| Operating Temperature Range (Case) T_c | -10 to +70 ℃ |
| Typ. Power Dissipation P_dt [1 W output power；At50 ℃ case temperature] | 20 W |
| Max. Power Dissipation P_d [Over case temperature range；Output power0.2 W] | 15 W |
| Max. Power Dissipation P_d [Over case temperature range；Output power1 W] | 25 W |
| Max. Power Dissipation P_d [Over case temperature range；Output power2 W] | 40 W |
| Max. Total Current I_max [Over case temperature range] | 4 A |
| Connector A | Optical FC/APC on output fiber; fiber length1 meter, 3 mm diameter; other connectors optional |
| Connector B | Mating sleeve for FC/APC on monitor output; typically20 dB below output optical power |
| Connector C | DB25; RS-232 data interface |
| Connector C Power Supply [Input；Pins1,2,3,4] | 11.5–12.5 VDC |
| Connector C GND [Input] | Pins14,15,16 |
| Output Power Monitor [Pin5；Output；Analog] | 0–4 VDC |
| Seed Power Monitor [Pin6；Output；Analog I output；voltage proportional to seed laser power in mW；1 V@3.16 mW(+5 dBm)] | 0–4 VDC |
| EDFA Temperature Alarm [Pin7；Output] | TTL Low=Normal; High if EDFA temperature >70℃ or <0℃; alarm ON and pump currents shut down |
| Output Power Alarm [Pin8；Output] | TTL Low=Normal; High if output power below factory setting; alarm ON and pump currents shut down |
| Diode Current Alarm [Pin9；Output] | TTL Low=Normal; High if diode current above EOL value; alarm ON and pump currents shut down |
| Diode Temperature Alarm [Pin10；Output] | TTL Low=Normal; High if diode temperature different from settings by ±5℃; alarm ON and pump current shut down |
| Case Temperature Monitor [Pin11；Output；Analog；750 mV@25℃] | 10 mV/℃ |
| Seed RS-232Rx [Pin12；Input] | Serial input RS232 for wavelength control |
| Diode Current Monitor [Pin13；Output] | Analog Output; voltage proportional to diode current |
| Direct Modulation [Pin17；Input] | Analog input for wavelength fast tuning/modulation |
| EDFA RS-232 TX Output [Pin18；Output] | Serial output RS232 for power control |
| Seed Power Alarm [Pin19；Output] | TTL Low=Normal; High if input power below user setting IPT; alarm ON and pump currents shutdown |
| Output Power Disable [Pin21；Input] | Low=Normal; High=Module OFF; alarm ON and pump currents shut down; Pull up |
| EDFA RS-232 RX Input [Pin22；Input] | Serial input RS232 for power control |
| Reset Manual [Pin23；Input] | Microcontroller resets; Low=Reset |
| Seed RS-232Tx [Pin24；Output] | Serial output RS232 for wavelength control |
Applications
Key Features
Datasheet
Supplier Information
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