RIO PLANEX™ Series 1550nm Low Phase Noise Narrow Linewidth External Cavity Laser
The RIO019x Series devices are high-performance, cost effective External Cavity Laser (ECL). The design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, forming a laser cavity with significant advantages. PLANEX™ laser combines high performance, comparable with long cavity fiber lasers, with the low cost, simplicity, small size and reliability of semiconductor lasers. PLANEX™ laser is an ideal source for multiple commercial and military fiber optic sensors applications, including interferometric and Brillouin DTSS systems for oil & gas, security and smart infrastructure monitoring, coherent Doppler LIDAR for wind measurements, coherent and heterodyne metrology, photonic velocimetry and vibrometry, and coherent communications. Lasers are available with various wavelength, phase noise and output power options.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Storage Temperature [Absolute Maximum Ratings；Min/Max] | -40 to +85 °C |
| Laser Diode Reverse Voltage [Absolute Maximum Ratings] | max:1.2 V |
| Laser Diode Forward Current [Absolute Maximum Ratings] | max:250 mA |
| Monitor Diode Reverse Voltage [Absolute Maximum Ratings] | max:15 V |
| Monitor Diode Forward Current [Absolute Maximum Ratings] | max:25 mA |
| TEC Current [Absolute Maximum Ratings] | max:1.5 A |
| TEC Voltage [Absolute Maximum Ratings] | max:4.0 V |
| ESD-susceptibility [Absolute Maximum Ratings] | max:500 V |
| Tensile Strength, Fiber to the Package [Absolute Maximum Ratings] | max:5 N |
| Fiber Bend Radius [Absolute Maximum Ratings] | min:35 mm |
| TEC Set Temperature Tset [Optical and Electrical Specifications；at recommended TEC set temperature Ts and bias current Ib；Min/Max；specified for every laser] | 15 to 50 °C |
| Threshold Current Ith [Optical and Electrical Specifications；at recommended TEC set temperature Ts and bias current Ib；@Tset] | typical:10 mA; max:15 mA |
| Laser Bias Current Ib [Optical and Electrical Specifications；at recommended TEC set temperature Ts and bias current Ib；CW, Pout] | typical:120 mA; max:200 mA |
| Laser Forward Voltage Vf [Optical and Electrical Specifications；at recommended TEC set temperature Ts and bias current Ib；CW, @100 mA] | typical:1.6 V; max:2 V |
| Center Wavelength (ITU Grid) λ [Optical and Electrical Specifications；at recommended TEC set temperature Ts and bias current Ib；Min/Max；±40 pm standard setting tolerance；customized wavelength/tolerance available] | 1530 to 1565 nm |
| Side Mode Suppression Ratio SMSR [Optical and Electrical Specifications；at recommended TEC set temperature Ts and bias current Ib；CW, at specified Pout] | min:40 dB |
| Wavelength vs. TEC Temperature dλ/dT [Optical and Electrical Specifications；at recommended TEC set temperature Ts and bias current Ib；Tset±2 °C] | typical:12 pm/°C |
| Wavelength Tunability ΔλT [Recommended TEC setpoint Ts and bias current Ib; phase-continuous TEC temperature tuning; some performance parameters change over tuning range; asymmetric: minimum +10 pm to -20 pm] | min:30 pm |
| Relative Intensity Noise RIN [Recommended TEC setpoint Ts and bias current Ib; ≥1 kHz] | max:-140 dB/Hz |
| Relative Intensity Noise RIN [Optical and Electrical Specifications；at recommended TEC set temperature Ts and bias current Ib；≥500 kHz；source qualitative value in common unit column] | Shot noise limited |
| Polarization Extinction Ratio PER [Optical and Electrical Specifications；at recommended TEC set temperature Ts and bias current Ib；PM PANDA option only；polarization and connector key aligned to slow axis] | min:20 dB |
| Monitor Bias Voltage VR [Optical and Electrical Specifications；at recommended TEC set temperature Ts and bias current Ib；cathode positive to anode] | min:4.75 V; typical:5 V; max:5.25 V |
| Monitor Diode Current Imc [Optical and Electrical Specifications；at recommended TEC set temperature Ts and bias current Ib；Min/Max；Pout] | 0.05 to 1 mA |
| Monitor Diode Dark Current Imd [Optical and Electrical Specifications；at recommended TEC set temperature Ts and bias current Ib；VR=5 V] | max:5 |
| Modulation Bandwidth [Optical and Electrical Specifications；at recommended TEC set temperature Ts and bias current Ib] | min:1 GHz |
| Input Impedance Z0 [Optical and Electrical Specifications；at recommended TEC set temperature Ts and bias current Ib] | typical:25 Ohm |
| Optical Isolation ISO [Optical and Electrical Specifications；at recommended TEC set temperature Ts and bias current Ib] | min:40 dB |
| Spectral Linewidth ΔλL [Linewidth and Phase Noise Specifications；at recommended TEC set temperature Ts and bias current Ib；Grade 1；FWHM；Lorentzian linewidth model] | ≤15 kHz |
| Phase Noise PhN [Linewidth and Phase Noise Specifications；at recommended TEC set temperature Ts and bias current Ib；Grade 1；Typical @10 Hz；1 m OPD；RIO interferometric test, 1 m path mismatch in SM fiber] | 123 μrad/rt-Hz |
| Phase Noise PhN [Linewidth and Phase Noise Specifications；at recommended TEC set temperature Ts and bias current Ib；Grade 1；Typical @200 Hz；1 m OPD；RIO interferometric test, 1 m path mismatch in SM fiber] | 22 μrad/rt-Hz |
| Spectral Linewidth ΔλL [Linewidth and Phase Noise Specifications；at recommended TEC set temperature Ts and bias current Ib；Grade 3；FWHM；Lorentzian linewidth model] | ≤5 kHz |
| Phase Noise PhN [Linewidth and Phase Noise Specifications；at recommended TEC set temperature Ts and bias current Ib；Grade 3；Typical @10 Hz；1 m OPD；RIO interferometric test, 1 m path mismatch in SM fiber] | 41 μrad/rt-Hz |
| Phase Noise PhN [Linewidth and Phase Noise Specifications；at recommended TEC set temperature Ts and bias current Ib；Grade 3；Typical @200 Hz；1 m OPD；RIO interferometric test, 1 m path mismatch in SM fiber] | 8 μrad/rt-Hz |
| Spectral Linewidth ΔλL [Linewidth and Phase Noise Specifications；at recommended TEC set temperature Ts and bias current Ib；Grade 4；FWHM；Lorentzian linewidth model] | ≤2 kHz |
| Phase Noise PhN [Linewidth and Phase Noise Specifications；at recommended TEC set temperature Ts and bias current Ib；Grade 4；Typical @10 Hz；1 m OPD；RIO interferometric test, 1 m path mismatch in SM fiber] | 20 μrad/rt-Hz |
| Phase Noise PhN [Linewidth and Phase Noise Specifications；at recommended TEC set temperature Ts and bias current Ib；Grade 4；Typical @200 Hz；1 m OPD；RIO interferometric test, 1 m path mismatch in SM fiber] | 4 μrad/rt-Hz |
| Operating Temperature Range (Case) Tc [Thermal Specifications；Min/Max] | -5 to +75 °C |
| TEC Current ITEC [Thermal Specifications；TCASE=75 °C, Ts] | max:1.1 A |
| TEC Voltage VTEC [Thermal Specifications；TCASE=75 °C, Ts] | max:3.4 V |
| Thermistor Resistance Rt [Thermal Specifications；25 °C] | typical:10 kΩ |
| Constant of Thermistor β [Thermal Specifications] | typical:3950 K |
| TEC Power Dissipation W0 [Thermal Specifications；TCASE=-5 to 75 °C, Ts] | typical:2.0 W; max:3.5 W |
| Pin Assignment [Pin 1；actual Pin-Out table] | Thermistor |
| Pin Assignment [Pin 2；actual Pin-Out table] | Thermistor |
| Pin Assignment [Pin 3；actual Pin-Out table] | Laser Cathode DC Bias (-) |
| Pin Assignment [Pin 4；actual Pin-Out table] | Photo Diode Anode (-) |
| Pin Assignment [Pin 5；actual Pin-Out table] | Photo Diode Cathode (+) |
| Pin Assignment [Pin 6；actual Pin-Out table] | TEC + |
| Pin Assignment [Pin 7；actual Pin-Out table] | TEC - |
| Pin Assignment [Pin 8；actual Pin-Out table] | Not connected |
| Pin Assignment [Pin 9；actual Pin-Out table] | Not connected |
| Pin Assignment [Pin 10；actual Pin-Out table] | Not connected |
| Pin Assignment [Pin 11；actual Pin-Out table] | Laser Anode (+) |
| Pin Assignment [Pin 12；actual Pin-Out table] | Cathode (RF input) |
| Pin Assignment [Pin 13；actual Pin-Out table] | Laser Anode (+) |
| Pin Assignment [Pin 14；actual Pin-Out table] | Not connected |
| Pigtail Option [FC/APC connector] | SMF 28; 900 μm; 1 m long |
| Pigtail Option [FC/APC connector] | PMF PANDA; 900 μm; 1 m long; key aligned to slow axis |
Applications
Key Features
Datasheet
Supplier Information
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