RIO PLANEX™ Series 1064nm Narrow Linewidth External Cavity Laser

RIO PLANEX™ Series 1064nm Narrow Linewidth External Cavity Laser

Supplier
Afrlaser
Category
Optical Fibers
Origin
China

The RIO019X-X-XX-X devices are high-performance cost effective External Cavity Laser (ECL). The design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, forming a laser cavity with significant advantages. PLANEX™ laser combines high performance, comparable with long cavity fiber lasers, with the low cost, simplicity, small size and reliability of semiconductor lasers. PLANEX™ laser is an ideal source for seeding of high power fiber and solid-state lasers, second harmonic generation and optical parametric oscillators, spectroscopy and other industrial and scientific applications, coherent Doppler LIDAR, metrology and optical sensing. Lasers are available with various wavelength and output power options.

Specification Snapshot
Storage Temperature [Absolute Maximum Ratings;min/max]
-40 to +85 °C
Threshold Current Ith [Optical and Electrical Specifications;at recommended TEC set temperature Ts and bias current Ib;@Tset]
typical:35 mA; max:50 mA
Center Wavelength λ [Optical and Electrical Specifications;at recommended TEC set temperature Ts and bias current Ib;Min/Max;customized wavelength and setting tolerance available]
1061 to 1067 nm
Side Mode Suppression Ratio SMSR [Optical and Electrical Specifications;at recommended TEC set temperature Ts and bias current Ib;CW, at specified Pout]
min:50 dB
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Overview

The RIO019X-X-XX-X devices are high-performance cost effective External Cavity Laser (ECL). The design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, forming a laser cavity with significant advantages. PLANEX™ laser combines high performance, comparable with long cavity fiber lasers, with the low cost, simplicity, small size and reliability of semiconductor lasers. PLANEX™ laser is an ideal source for seeding of high power fiber and solid-state lasers, second harmonic generation and optical parametric oscillators, spectroscopy and other industrial and scientific applications, coherent Doppler LIDAR, metrology and optical sensing. Lasers are available with various wavelength and output power options.

Specifications

ParameterValue
Storage Temperature [Absolute Maximum Ratings;min/max]-40 to +85 °C
Laser Diode Reverse Voltage [Absolute Maximum Ratings]max:2 V
Laser Diode Forward Current [Absolute Maximum Ratings]max:150 mA
Monitor Diode Reverse Voltage [Absolute Maximum Ratings]max:15 V
Monitor Diode Forward Current [Absolute Maximum Ratings]max:25 mA
TEC Current [Absolute Maximum Ratings]max:1.5 A
TEC Voltage [Absolute Maximum Ratings]max:4.0 V
Tensile Strength, Fiber to the Package [Absolute Maximum Ratings]max:5 N
Fiber Bend Radius [Absolute Maximum Ratings]min:35 mm
TEC Set Temperature Tset [Optical and Electrical Specifications;at recommended TEC set temperature Ts and bias current Ib;Min/Max;specified for every laser]15 to 50 °C
Threshold Current Ith [Optical and Electrical Specifications;at recommended TEC set temperature Ts and bias current Ib;@Tset]typical:35 mA; max:50 mA
Laser Bias Current Ib [Optical and Electrical Specifications;at recommended TEC set temperature Ts and bias current Ib;CW, Pout]typical:100 mA; max:140 mA
Laser Forward Voltage Vf [Optical and Electrical Specifications;at recommended TEC set temperature Ts and bias current Ib;CW, @100 mA]typical:3 V; max:3.5 V
Center Wavelength λ [Optical and Electrical Specifications;at recommended TEC set temperature Ts and bias current Ib;Min/Max;customized wavelength and setting tolerance available]1061 to 1067 nm
Side Mode Suppression Ratio SMSR [Optical and Electrical Specifications;at recommended TEC set temperature Ts and bias current Ib;CW, at specified Pout]min:50 dB
Wavelength vs. TEC Temperature dλ/dT [Optical and Electrical Specifications;at recommended TEC set temperature Ts and bias current Ib;Tset±1 °C]typical:14 pm/°C
Wavelength Tunability ΔλT [Recommended TEC setpoint Ts and bias current Ib; phase-continuous TEC temperature tuning; performance parameters may change over tuning range; asymmetric about center wavelength: minimum +7 pm to -13 pm]min:20 pm
Relative Intensity Noise RIN [Optical and Electrical Specifications;at recommended TEC set temperature Ts and bias current Ib;>1 kHz]typical:-135 dB/Hz
Polarization Extinction Ratio PER [Optical and Electrical Specifications;at recommended TEC set temperature Ts and bias current Ib;PM PANDA option only;polarization and connector key aligned to slow axis]min:17 dB; typical:20 dB
Monitor Bias Voltage VR [Optical and Electrical Specifications;at recommended TEC set temperature Ts and bias current Ib;cathode positive to anode]min:4.75 V; typical:5 V; max:5.25 V
Monitor Diode Current Imc [Optical and Electrical Specifications;at recommended TEC set temperature Ts and bias current Ib;Min/Max;Pout]0.15 to 1.5 mA
Monitor Diode Dark Current Imd [Optical and Electrical Specifications;at recommended TEC set temperature Ts and bias current Ib;VR=5 V]max:5
Input Impedance Z0 [Optical and Electrical Specifications;at recommended TEC set temperature Ts and bias current Ib]typical:25 Ohm
Optical Isolation ISO [Optical and Electrical Specifications;at recommended TEC set temperature Ts and bias current Ib]min:23 dB
Spectral Linewidth ΔλL [Linewidth Specifications;at recommended TEC set temperature Ts and bias current Ib;Grade 1;FWHM;Lorentzian linewidth model]≤15 kHz
Spectral Linewidth ΔλL [Linewidth Specifications;at recommended TEC set temperature Ts and bias current Ib;Grade 3;FWHM;Lorentzian linewidth model]≤5 kHz
Phase Noise PN [Linewidth Specifications;at recommended TEC set temperature Ts and bias current Ib;Grade 3;Typical @10 Hz]74 μrad/rt(Hz)-m
Phase Noise PN [Linewidth Specifications;at recommended TEC set temperature Ts and bias current Ib;Grade 3;Typical @200 Hz]13 μrad/rt(Hz)-m
Operating Temperature Range (Case) Tc [Thermal Specifications;Min/Max]+5 to +50 °C
TEC Current ITEC [Thermal Specifications;TCASE=50 °C, Ts]max:0.8 A
TEC Voltage VTEC [Thermal Specifications;TCASE=50 °C, Ts]max:2.5 V
Thermistor Resistance Rt [Thermal Specifications;25 °C]typical:10 kΩ
Constant of Thermistor β [Thermal Specifications]typical:3950 K
TEC Power Dissipation W0 [Thermal Specifications;TCASE=5 to 50 °C, Ts]typical:1.0 W; max:2.0 W
Pin Assignment [Pin 1;actual Pin-Out table]Thermistor
Pin Assignment [Pin 2;actual Pin-Out table]Thermistor
Pin Assignment [Pin 3;actual Pin-Out table]Laser Cathode DC Bias (-)
Pin Assignment [Pin 4;actual Pin-Out table]Photo Diode Anode (-)
Pin Assignment [Pin 5;actual Pin-Out table]Photo Diode Cathode (+)
Pin Assignment [Pin 6;actual Pin-Out table]TEC +
Pin Assignment [Pin 7;actual Pin-Out table]TEC -
Pin Assignment [Pin 8;actual Pin-Out table]Not connected
Pin Assignment [Pin 9;actual Pin-Out table]Package
Pin Assignment [Pin 10;actual Pin-Out table]Package
Pin Assignment [Pin 11;actual Pin-Out table]Laser Anode (+)
Pin Assignment [Pin 12;actual Pin-Out table]Cathode (RF input)
Pin Assignment [Pin 13;actual Pin-Out table]Laser Anode (+)
Pin Assignment [Pin 14;actual Pin-Out table]Package
Pigtail Option [FC/APC connector]HI 1060 SMF; 900 μm loose tube; 1 m
Pigtail Option [FC/APC connector]SM98 PMF PANDA; 900 μm loose tube; 1 m; key aligned to slow axis

Applications

Seeding of fiber and solid-state lasers; Second Harmonic Generation (SHG); Optical Parametric Oscillators (OPOs); LIDAR; Laser Spectroscopy; Metrology

Key Features

Single longitudinal mode Center wavelength: 1061nm-1067nm Narrow linewidth, long coherence length Low phase noise Wavelength tunability Very low RIN Excellent SMSR Excellent wavelength stability over life and temperature Low sensitivity to vibration and acoustic noise CW, modulated and pulsed operations Small form factor, 14 pin butterfly Low power dissipation SMF and PM fiber pigtail options Telecordia GR-468 qualified platform RoHS compliant

Datasheet

Product Datasheet
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Supplier Information

Af
Afrlaser
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Zhuhai AFR Technology Co., Ltd. (hereinafter referred to as "AFR") was founded in 2000 and is a national high-tech enterprise specializing in fiber optic components and chip integration. The senior management team is composed of top international talents in the fields of lasers, chips, and optical communications. The company's products are used in AI data centers, fiber optic communications, fiber lasers, autonomous driving, fiber optic sensing, medical equipment, scientific research, and other fields, and are widely sold to more than 40 countries and regions including Europe, America, and Japan. In 2017, AFR was listed on the ChiNext (stock code: 300620) and is one of the few suppliers of core components for submarine long-haul optical networks in the world. It has established innovation platforms such as the "National Enterprise Technology Center", "Guangdong Provincial Optoelectronic Device Engineering Technology Research Center", "Guangdong Provincial Academician Expert Enterprise Workstation", and "Postdoctoral Research Workstation". The company currently has thousands of sets of high-end production and processing equipment and a site area of over 130,000 square meters. AFR is headquartered in Zhuhai and currently has 6 wholly-owned subsidiaries: Milan AFR, Thailand AFR, Wuhan AFR, Hong Kong AFR, Jiahua Weijie, and Guangchen Technology, and 1 holding subsidiary: Baian Optoelectronics.

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