InP-Based Epitaxial Wafer
The manufacturer's data-center epitaxial wafers are primarily grown on InP and GaAs substrates. InP-based wafers mainly support edge-emitting DFB/EML lasers and silicon-photonics epitaxy, with rates above 25Gb/s and wavelengths including 1270nm, 1310nm and 1330nm, meeting transmission requirements for 100G/400G/800G optical modules.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Rate [DFB Extras] | 10G/25G/50G |
| Wavelength [DFB Extras] | 1310 nm |
| Dimensions [DFB Extras] | 2inch/3inch |
| Wavelength [Large power DFAB excursion] | 1310 nm |
| Dimensions [Large power DFAB excursion] | 2inch/3inch |
| Wavelength [Silicon-light exterior extension] | 1310 nm |
| Dimensions [Silicon-light exterior extension] | 2inch/3inch |
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Key Features
Datasheet
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Supplier Information
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