XY440 Type Silicon Avalanche Photodetector
This quadrant detector operates over 0.4~1.1μm and uses an n⁺p⁻πp⁺ reach-through structure, combining high sensitivity, fast response and low noise. Internal avalanche multiplication can reach 100 times or more. It suits photodetection and electro-optical countermeasure systems.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Photosensitive Surface Size-Diameter Ф [T_A=22℃] | 典型：4 |
| Photosensitive area dimensions - spacing [T_A=22℃] | 典型：0.11 |
| Spectral Response Range [T_A=22℃] | 最小：400；最大：1100 |
| Dark Current I_d [T_A=22℃] | 典型：7；最大：70 |
| Operating Voltage Vₒₚₜ [T_A=22℃] | 最小：300；最大：500 |
| Operating Voltage Temperature Coefficient K [T_A=22℃] | 典型：3.3 |
| Current responsivity RV [T_A=22℃；1064nm] | 典型：36 |
| Noise Equivalent Power NEP [T_A=22℃；1064nm] | 典型：0.11；最大：0.27 |
| Response Rise Time Tᵣ [T_A=22℃] | 典型：5 |
| Response Fall Time T_f [T_A=22℃] | 典型：5 |
| Operating Ambient Temperature Ta [T_A=22℃] | 最小：-40；最大：+70 |
| Photocurrent uniformity [T_A=22℃；M=50] | typical ：±5%； maximum ：±10% |
Datasheet
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