XY063-1060-R8B Type Silicon Avalanche Photodetector
This detector for optical signals over 0.4~1.1μm has an n+p-πp+ reach-through structure, combining high sensitivity, fast response and low noise. Internal avalanche multiplication can exceed 120 times. Applications include laser ranging, velocity and angle measurements, photoelectric detection and optoelectronic countermeasures. It offers high resistance to laser damage. Note: the signal output is in negative pulses.
Specification Snapshot
Dark Current Id [TA=22℃]
最大:200
Operating Voltage Vopt [TA=22℃]
最小:275;最大:425
Output Impedance [TA=22℃]
典型:25;最大:50
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Overview
This detector for optical signals over 0.4~1.1μm has an n+p-πp+ reach-through structure, combining high sensitivity, fast response and low noise. Internal avalanche multiplication can exceed 120 times. Applications include laser ranging, velocity and angle measurements, photoelectric detection and optoelectronic countermeasures. It offers high resistance to laser damage. Note: the signal output is in negative pulses.
Specifications
| Parameter | Value |
|---|---|
| Photosensitive Surface Size-Diameter Ф [TA=22℃] | 典型:0.8 |
| Photosensitive Surface Size-Area [TA=22℃] | 典型:0.5 |
| Spectral Response Range [TA=22℃] | 最小:400;最大:1100 |
| Dark Current Id [TA=22℃] | 最大:200 |
| Operating Voltage Vopt [TA=22℃] | 最小:275;最大:425 |
| Operating Voltage Temperature Coefficient K [TA=22℃] | 最小:1.0;最大:2.4 |
| Voltage Responsivity RV [TA=22℃;1064nm] | 最小:1.1;典型:2.0 |
| Noise Equivalent Power NEP [TA=22℃;1064nm] | 典型:0.19;最大:0.29 |
| Response Rise Time Tr [TA=22℃] | 典型:2;最大:4 |
| Response Fall Time Tf [TA=22℃] | 典型:4;最大:4 |
| Output Impedance [TA=22℃] | 典型:25;最大:50 |
| Output Bias Voltage [TA=22℃] | 最小:0.0;典型:0.2;最大:1.0 |
| Amplifier Supply Voltage Vs [TA=22℃] | typical :±5.0 |
| Amplifier Supply Current +Is [TA=22℃] | 典型:20 |
| Amplifier Supply Current -Is [TA=22℃] | 典型:10 |
| Operating Ambient Temperature Ta [TA=22℃] | 最小:-40;最大:+70 |
| Maximum Reverse Dark Current ID [TA=22℃] | 最大:0.2 |
| Maximum Photocurrent-Average IP [TA=22℃] | 最大:2.5 |
| Maximum Photocurrent-Peak IP [TA=22℃] | 最大:10 |
Datasheet
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Supplier Information
Chengdu Xinyuan Huibo Optoelectronics Technology Co., Ltd., established in 2007, focuses on the R&D and production of laser and infrared devices. Its products are mainly applied in the laser field. The main products include laser crystals, Q-switch crystals, nonlinear crystals, detectors, and optical components. Featured products include gradient concentration crystals, highly doped crystals, strong-light-protected detectors, high damage threshold optical lenses, and narrowband filters.
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