Zinc Germanium Phosphide
Chemical formula: ZnGeP2. Density: 4.162 g/cm3. Surface quality: 20-10. Parallelism: <30 arc sec. Perpendicularity: <5 arc min. Transmission range: 0.75 - 12.0. Chamfer: <0.1 mm x 45°. Zinc germanium phosphide is called the king of mid-infrared nonlinear crystals for its large nonlinear coefficient (deff=75pm/V), broad transparency range (0.7-12μm), high thermal conductivity (35W/mK), high optical damage threshold (2-5J/cm), and good machinability. It is described as the best medium currently available for high-power, tunable infrared output. These unique properties make it one of the most important crystals in nonlinear optics. Optical parametric oscillation produces continuously tunable 3-5μm lasers. The atmospheric transmission window at 3-5μm supports applications including infrared countermeasures, chemical detection, medical equipment, and infrared remote sensing. Our capabilities: our high-quality crystals have absorption below0.05 cm-1 at2.0-2.1µm, enabling efficient tunable mid-IR output by OPO or OPA. Dynamic thermal-field technology synthesizes high-purity, large-grained polycrystals in batches exceeding500g. Horizontal gradient freezing with oriented necking reduces dislocation density and yields domestically leading single-crystal quality. Vertical gradient freezing produces kilogram-scale high-quality crystals with the world's largest aperture (Φ55 mm). Advanced fine surface treatment achieves roughness below5A and flatness below1/10λ. Precise orientation and cutting keep finished-device angular deviation below0.1 degree. High-quality crystals and advanced processing yield high-performance devices: a2μm pump produces3-5μm mid-IR output with optical-to-optical conversion efficiency above56%. Years of development have established core capabilities in thermal-field design for large infrared single crystals, stable volume synthesis of high-vapor-pressure sulfur/phosphorus-family infrared polycrystals, large-aperture high-temperature/high-pressure-resistant quartz vacuum sealing, controlled growth of low-defect, low-absorption, high-performance sulfur/phosphorus-family infrared single crystals, uniform vapor-deposited carbon coating, crystal-quality assessment, and precise orientation of crystals lacking characteristic directions. The company has overcome difficulties in replicating sulfur/phosphorus-family infrared crystal-growth equipment and processes. Its crystals and devices offer good uniformity, low 'coefficient coefficient' (source wording), and high light-output efficiency to meet market requirements.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Dimensional Tolerance | +0/-0.1 mm |
| Length Tolerance | ±0.1 mm |
| Cut-Angle Cutting Orientation Accuracy | <30 arcmin |
| Surface Quality | 20-10 S-D |
| Surface Flatness [632.8nm] | <λ/4@632.8 nm |
| Parallelism Error | <30 arcsec |
| Perpendicularity | <5 arcmin |
| Chamfer | <0.1 mm x 45° |
| Transmission Range | 0.75 - 12.0 ?m |
| Crystal Point Group | 42 m |
| Density | 4.12 g/cm3 |
| Mohs Hardness | 5.5 |
| Nonlinear Coefficient d36 [10.6μm] | d36 = 68.9 pm/V (at 10.6μm) |
| Nonlinear Coefficient d36 [9.6μm] | d36 = 75.0 pm/V (at 9.6 μm) |
| Material Optical Damage Threshold [150ns；10.6μm] | 60 MW/cm2 ,150ns@10.6μm |
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Datasheet
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