ZPD838C
ZPD838 is a high-speed, high-sensitivity PIN photodiode in a cylindrical side-view encapsulant package. The device is matched to infrared emitting diodes.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Open-Circuit Voltage VOC [Optoelectronic Characteristics ；Ta=25℃；λP=940nm；Ee=5mW/cm²] | typical ：0.35 |
| Short-Circuit Current ISC [Optoelectronic Characteristics ；Ta=25℃；λP=940nm；Ee=1mW/cm²] | typical ：18 |
| Reverse Light Current IL [Optoelectronic Characteristics ；Ta=25℃；λP=940nm；VR=5V；Ee=1mW/cm²] | min ：15； typical ：25 |
| Reverse Dark Current ID [Optoelectronic Characteristics ；Ta=25℃；VR=10V；Ee=0mW/cm²] | typical ：5； max ：30 |
| Rise Time tr [Optoelectronic Characteristics ；Ta=25℃；VR=10V；RL=1000Ω] | typical ：50 |
| Fall Time tf [Optoelectronic Characteristics ；Ta=25℃；VR=10V；RL=1000Ω] | typical ：50 |
| Reverse Breakdown Voltage BVR [Optoelectronic Characteristics ；Ta=25℃；Ee=0mW/cm²；IR=100μA] | min ：15； typical ：170 |
| Total Capacitance Ct [Optoelectronic Characteristics ；Ta=25℃；Ee=0mW/cm²；VR=5V；f=1MHz] | typical ：25 |
| Detection Wavelength Range / Range of Spectral Bandwidth λ0.5 [Optoelectronic Characteristics ；Ta=25℃] | min ：830； max ：1100 |
| Wavelength of Peak Sensitivity λP [Optoelectronic Characteristics ；Ta=25℃] | typical ：940 |
Applications
Key Features
Datasheet
Supplier Information
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