ZPD888C
ZPD888C is a high-speed, high-sensitivity PIN photodiode in a cylindrical side-view plastic package. The epoxy package itself is an IR filter, spectrally matched to an IR-emitting diode.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Maximum Power Power Dissipation Pd [Absolute Maximum Ratings ;Ta=25℃] | 150 mW |
| Reverse Voltage VR [Absolute Maximum Ratings ;Ta=25℃] | 32 V |
| Operating Temperature Operating Temperature Topr [Absolute Maximum Ratings ;Ta=25℃] | -25~+85 ℃ |
| Storage Temperature Tstg [Absolute Maximum Ratings ;Ta=25℃] | -40~+100 ℃ |
| Lead Soldering Temperature Tsol [Absolute maximum ratings; Ta=25℃; soldering for no more than 5s at least 2mm away from the encapsulant] | 260 ℃ |
| Open-Circuit Voltage VOC [Optoelectronic Characteristics ；Ta=25℃；λP=940nm；Ee=5mW/cm²] | typical ：0.35 |
| Short-Circuit Current ISC [Optoelectronic Characteristics ；Ta=25℃；λP=940nm；Ee=1mW/cm²] | typical ：35 |
| Reverse Light Current IL [Optoelectronic Characteristics ；Ta=25℃；λP=940nm；VR=5V；Ee=1mW/cm²] | typical ：27 |
| Reverse Dark Current ID [Optoelectronic Characteristics ；Ta=25℃；VR=10V；Ee=0mW/cm²] | max ：20 |
| Rise Time tr [Optoelectronic Characteristics ；Ta=25℃；VR=10V；RL=1000Ω] | typical ：50 |
| Fall Time tf [Optoelectronic Characteristics ；Ta=25℃；VR=10V；RL=1000Ω] | typical ：50 |
| Reverse Breakdown Voltage BVR [Optoelectronic Characteristics ；Ta=25℃；Ee=0mW/cm²；IR=100μA] | min ：33； typical ：170 |
| Total Capacitance Ct [Optoelectronic Characteristics ；Ta=25℃；Ee=0mW/cm²；VR=5V；f=1MHz] | typical ：44 |
| Detection Wavelength Range / Range of Spectral Bandwidth λ0.5 [Optoelectronic Characteristics ；Ta=25℃] | min ：400； max ：1100 |
| Wavelength of Peak Sensitivity λP [Optoelectronic Characteristics ；Ta=25℃] | typical ：940 |
| Packing Specification | 1000 pieces/bag; 8 bags/box; 10 boxes/carton |
Applications
Key Features
Datasheet
Supplier Information
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