ZOE-T0802 ZOE-T0802-XX-XX
The ZOE-T0802 series comprises high-performance, low-cost, optical two-channel incremental encoder modules. A precision grating-phase matrix receiver chip and light source are integrated; with a code disk, the module senses rotational position and speed. Linear-resolution options are LPI:20,45,90,150,180,300,360. Options with an optical radius of11mm are100CPR and600CPR. Package dimensions:mechanical drawings for bent leads and straight leads. For bent-lead dimensions, all dimensions are in millimeters and unspecified tolerances are ±0.3mm. For straight-lead dimensions, all dimensions are in millimeters and unspecified tolerances are ±0.3mm. Pin Definitions. Electro-Optical Characteristics. Absolute Maximum Ratings.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Operating Voltage working voltage VF [Maximum Ratings ;Ta=25℃] | -0.5~7 V |
| Reverse Voltage VR [Maximum Ratings ;Ta=25℃] | 3 V |
| Operating Temperature Operating Temperature Topr [Maximum Ratings ;Ta=25℃] | -20~+85 ℃ |
| Storage Temperature Tstg [Maximum Ratings ;Ta=25℃] | -40~+85 ℃ |
| Lead Soldering Temperature Tsol [Maximum Ratings;Ta=25℃;5 Seconds;Solder for No More Than5s More Than2mm from Package Body] | Not Exceeding 260 |
| Operating Frequency [Maximum Ratings ;Ta=25℃] | 500 KHz |
| Light-Source Reverse Voltage Vr [Maximum Ratings ;Ta=25℃] | 10 V |
| Forward Current IF [Maximum Ratings ;Ta=25℃;650nm Light Source] | 30 mA |
| Forward Current IF [Maximum Ratings ;Ta=25℃;850nm Light Source] | 70 mA |
| Operating Voltage working voltage VF [Recommended Operating Environment;Ripple Voltage below100mV] | 4.5~5 V |
| Operating Temperature Operating Temperature Topr [Recommended Operating Environment] | -20~+85 ℃ |
| Light-Source Forward Voltage Vf [Optoelectronic Characteristics ;Ta=25℃;650nm Light Source ;If=20mA] | min ：1.8； typical ：2； max ：2.3 |
| Light Source Wavelength p [Optoelectronic Characteristics ;Ta=25℃;650nm Light Source ;If=20mA] | min ：650； max ：660 |
| Light-Source Forward Voltage Vf [Optoelectronic Characteristics ;Ta=25℃;850nm Light Source ;If=20mA] | min ：1.4； max ：1.9 |
| Light Source Wavelength p [Optoelectronic Characteristics ;Ta=25℃;850nm Light Source ;If=20mA] | min ：845； max ：855 |
| Receiver-Chip Operating Current Icc [Optoelectronic Characteristics ；Ta=25℃] | typical ：10； max ：15 |
| Output Low Level VOL [Ta=25℃;Internal2kΩ Pull-Up Resistor] | typical ：0.4； max ：0.5 |
| Output High Level VOH [Ta=25℃;Internal2kΩ Pull-Up Resistor] | min ：4； typical ：4.5 |
| A/B Rise Time tr [Ta=25℃;Internal2kΩ Pull-Up Resistor;CL=8PF] | typical ：100 |
| A/B Downward-Rising Edge Time tf [Ta=25℃;Internal2kΩ Pull-Up Resistor;CL=8PF] | typical ：50 |
| AB Duty Cycle Dt [Optoelectronic Characteristics ；Ta=25℃] | min ：40； typical ：50； max ：60 |
| AB Phase Difference θ [Optoelectronic Characteristics ；Ta=25℃] | min ：60； typical ：90； max ：120 |
| Response Frequency f [Optoelectronic Characteristics ；Ta=25℃] | max ：200 |
Applications
Key Features
Datasheet
Supplier Information
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