3535 ZHIR-3535C-33G30-60-Z1
Main overview: the ZHIR-3535C-33-60-Z1 is a high-radiant-output infrared-emitting diode in a miniature SMD package, molded in water-clear plastic with a spherical top-view lens. It can be paired with phototransistors, photodiodes, and infrared receiver modules, and is spectrally matched to silicon photodiodes and phototransistors. Selected-PDF description included in the JSON: the ZHIR-3535C-33G30-60-Z1 is an infrared-emitting diode in a miniature SMD package, molded in water-clear silicone, described in Chinese as transparent water-based silicone, with a spherical top-view lens. It is spectrally matched to silicon photodiodes, CCDs, and CMOS sensors.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Maximum Power Power Dissipation Pd [Absolute Maximum Ratings ;Ta=25℃] | 3 W |
| Maximum Reverse Voltage VR [Absolute Maximum Ratings ;Ta=25℃] | 5 V |
| Forward DC Operating Current IF [Absolute Maximum Ratings ;Ta=25℃] | 1000 mA |
| Operating Temperature Operating Temperature Topr [Absolute Maximum Ratings ;Ta=25℃] | -40~+85 ℃ |
| Storage Temperature Tstg [Absolute Maximum Ratings ;Ta=25℃] | -40~+100 ℃ |
| Lead Soldering Temperature Tsol [Absolute Maximum Ratings;Ta=25℃;Reflow Soldering<10s;Footnote:Solder for No More Than5s at Least2mm from Package Body] | 260 ℃ |
| Lead Soldering Temperature Tsol [Absolute Maximum Ratings;Ta=25℃;Manual Soldering<3s;Footnote:Solder for No More Than5s at Least2mm from Package Body] | 300 ℃ |
| Radiant Power [Optoelectronic Characteristics ；Ta=25℃；IF=500mA；tp=10ms] | typical ：350 |
| Radiant Power [Optoelectronic Characteristics ；Ta=25℃；IF=1000mA；tp=10ms] | min ：500； max ：900 |
| Emission Angle (View Angle) 2θ1/2 [Optoelectronic Characteristics ；Ta=25℃；IF=100mA] | typical ：60 |
| Peak Wavelength λp [Optoelectronic Characteristics ；Ta=25℃；IF=350mA；tp=10ms] | typical ：850 |
| Spectral Line Half-Width Δλ [Optoelectronic Characteristics ；Ta=25℃；IF=350mA] | typical ：30 |
| Forward Voltage VF [Optoelectronic Characteristics ；Ta=25℃；IF=500mA；tp=10ms] | typical ：1.65； max ：2.00 |
| Forward Voltage VF [Optoelectronic Characteristics ；Ta=25℃；IF=1000mA；tp=10ms] | typical ：2.00； max ：3.00 |
| Reverse Current IR [Optoelectronic Characteristics ；Ta=25℃；VR=5V] | max ：10 |
| Radiant Power by Grade Bin [Rank；BIN=A1；IF=1000mA] | min ：500； max ：600 |
| Radiant Power by Grade Bin [Rank；BIN=A2；IF=1000mA] | min ：600； max ：700 |
| Radiant Power by Grade Bin [Rank；BIN=A3；IF=1000mA] | min ：700； max ：800 |
| Radiant Power by Grade Bin [Rank；BIN=A4；IF=1000mA] | min ：800； max ：900 |
| Forward Voltage by Grade Bin VF [Rank；BIN=V1；IF=1000mA] | min ：2.0； max ：2.2 |
| Forward Voltage by Grade Bin VF [Rank；BIN=V2；IF=1000mA] | min ：2.2； max ：2.4 |
| Forward Voltage by Grade Bin VF [Rank；BIN=V3；IF=1000mA] | min ：2.4； max ：2.6 |
| Forward Voltage by Grade Bin VF [Rank；BIN=V4；IF=1000mA] | min ：2.6； max ：2.8 |
| Forward Voltage by Grade Bin VF [Rank；BIN=V5；IF=1000mA] | min ：2.8； max ：3.0 |
| Forward Voltage Measurement Tolerance (Measurement Uncertainty of Forward Voltage) [Optoelectrical specification table note; Chinese and English wavelength names retained side by side as supplied] | ±0.1 V |
| Luminous Intensity Measurement Tolerance (Measurement Uncertainty of Luminous Intensity) [Optoelectrical specification table note; Chinese and English wavelength names retained side by side as supplied] | ±15 % |
| Peak Wavelength Measurement Tolerance (Measurement Uncertainty of Dominant Wavelength) [Optoelectrical specification table note; Chinese and English wavelength names retained side by side as supplied] | ±2.0 nm |
| Loaded Quantity | 1000 pcs/reel |
Applications
Key Features
Datasheet
Supplier Information
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