ZIRP08C
ZIRP08C is a high-radiant-intensity diode with transparent encapsulation. The English source describes its molded enclosure as a 'water plastic package', without defining the wording. It is spectrally matched to phototransistors, photodiodes, and infrared receiver modules. Package dimensions. Notes: all dimensions are in millimeters; unspecified tolerances are ±0.3mm. Electro-optical characteristics: *2 Pulse width≦100μs, duty cycle=1%. Absolute maximum ratings: *1 Tested at an ambient25°C; the English note states 'below25 Free Air Temperature'. *2 Pulse width≦100μs, duty cycle=1%. *3 Solder within5s at a distance greater than2mm from the encapsulant.
Specification Snapshot
Storage Temperature Tstg [Absolute Maximum Ratings ;Ta=25℃]
-40~+100 ℃
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Overview
ZIRP08C is a high-radiant-intensity diode with transparent encapsulation. The English source describes its molded enclosure as a 'water plastic package', without defining the wording. It is spectrally matched to phototransistors, photodiodes, and infrared receiver modules. Package dimensions. Notes: all dimensions are in millimeters; unspecified tolerances are ±0.3mm. Electro-optical characteristics: *2 Pulse width≦100μs, duty cycle=1%. Absolute maximum ratings: *1 Tested at an ambient25°C; the English note states 'below25 Free Air Temperature'. *2 Pulse width≦100μs, duty cycle=1%. *3 Solder within5s at a distance greater than2mm from the encapsulant.
Specifications
| Parameter | Value |
|---|---|
| Power Power Dissipation Pd [Absolute Maximum Ratings ;Ta=25℃] | 75 mW |
| Reverse Voltage VR [Absolute Maximum Ratings ;Ta=25℃] | 5 V |
| Continuous Forward Current IF [Absolute Maximum Ratings ;Ta=25℃] | 50 mA |
| Pulsed Forward Current (Peak Forward Current) IFP [Absolute Maximum Ratings ;Ta=25℃; Pulse Width ≤100μs, Duty Cycle 1%] | 1 A |
| Operating Temperature Operating Temperature Topr [Absolute Maximum Ratings ;Ta=25℃] | -25~+85 ℃ |
| Storage Temperature Tstg [Absolute Maximum Ratings ;Ta=25℃] | -40~+100 ℃ |
| Lead Soldering Temperature Tsol [Absolute maximum ratings; Ta=25℃; soldering for no more than 5s at least 2mm away from the encapsulant] | 260 ℃ |
| Photocurrent (Light Current) Ic(on) [Optoelectronic Characteristics ;Ta=25℃;IF=4mA;Vce=3.5V] | min :143 |
| Peak Wavelength λp [Optoelectronic Characteristics ;Ta=25℃;IF=20mA] | typical :940 |
| Spectral Bandwidth Δλ [Optoelectronic Characteristics ;Ta=25℃;IF=20mA] | typical :45 |
| Forward Voltage VF [Optoelectronic Characteristics ;Ta=25℃;IF=20mA] | typical :1.2; max :1.5 |
| Reverse Current IR [Optoelectronic Characteristics ;Ta=25℃;VR=5V] | max :10 |
| Emission Angle (View Angle) 2θ1/2 [Optoelectronic Characteristics ;Ta=25℃;IF=20mA] | typical :40 |
| Photocurrent by Rank Ee [Rank;BIN=E1;IF=4mA;Vce=3.5V] | min :143; max :225 |
| Photocurrent by Rank Ee [Rank;BIN=E2;IF=4mA;Vce=3.5V] | min :214; max :343 |
| Photocurrent by Rank Ee [Rank;BIN=E3;IF=4mA;Vce=3.5V] | min :286; max :431 |
| Photocurrent by Rank Ee [Rank;BIN=E4;IF=4mA;Vce=3.5V] | min :357; max :519 |
| Photocurrent by Rank Ee [Rank;BIN=E5;IF=4mA;Vce=3.5V] | min :428; max :608 |
| Photocurrent by Rank Ee [Rank;BIN=E6;IF=4mA;Vce=3.5V] | min :500; max :696 |
| Photocurrent by Rank Ee [Rank;BIN=E7;IF=4mA;Vce=3.5V] | min :571; max :784 |
| Forward Voltage Measurement Tolerance (Measurement Uncertainty of Forward Voltage) [Optoelectrical specification table note; Chinese and English wavelength names retained side by side as supplied] | ±0.1 V |
| Luminous Intensity Measurement Tolerance (Measurement Uncertainty of Luminous Intensity) [Optoelectrical specification table note; Chinese and English wavelength names retained side by side as supplied] | ±10 % |
| Peak Wavelength Measurement Tolerance (Measurement Uncertainty of Dominant Wavelength) [Optoelectrical specification table note; Chinese and English wavelength names retained side by side as supplied] | ±1.0 nm |
| Packing Specification | 1000 pieces/bag; 8 bags/box; 10 boxes/carton |
Applications
Infrared cameras, remote controls, photoelectric switches and printers. Cameras, remotes, switches and printers.
Key Features
High reliability and radiant intensity; low forward-voltage drive; emission wavelength 940nm, λp=940nm; lead-free materials; RoHS certification/compliant version.
Datasheet
Product Datasheet
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Supplier Information
Guangdong Zhouguangyuan was founded in 2014, with over ten years of experience in optoelectronic device development and manufacturing. It has full-process capabilities from IC design to packaging, providing optoelectronic solutions for chips from 200nm to 1700nm. Products include SMD, Lamps, receivers, photoelectric switches, and smart sensors. Adhering to the philosophy of 'striver-oriented, scientific development, innovation, and dedication to creation', it has become a must-choose brand for infrared optoelectronic devices in China. Its products are applied in smart electronics, automotive electronics, industrial automation, etc.
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