T0301-F ZOS-T0301-F
The ZOS-T0301-F consists of an infrared-emitting diode and an NPN silicon phototransistor, mounted side by side with converging optical axes in a black thermoplastic housing. Normally, the phototransistor receives radiation only from the IR emitter. When an object is between them, the phototransistor cannot receive the radiation. For additional component information, refer to IR and PT.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Maximum Power Power Dissipation Pd [Absolute Maximum Ratings; Ta=25℃; Input Emitter] | 75 mW |
| Maximum Reverse Voltage VR [Absolute Maximum Ratings; Ta=25℃; Input Emitter] | 5 V |
| Maximum Continuous Forward Current IF [Absolute Maximum Ratings; Ta=25℃; Input Emitter] | 50 mA |
| Maximum Power Power Dissipation Pd [Absolute Maximum Ratings; Ta=25℃; Output Detector] | 75 mW |
| Collector-Emitter Voltage VCEO [Absolute Maximum Ratings; Ta=25℃; Output Detector] | 35 V |
| Emitter-Collector Voltage VECO [Absolute Maximum Ratings; Ta=25℃; Output Detector] | 5 V |
| Collector Current IC(ON) [Absolute Maximum Ratings; Ta=25℃; Output Detector] | 20 mA |
| Operating Temperature Operating Temperature Topr [Maximum Ratings ;Ta=25℃] | -25~+85 ℃ |
| Storage Temperature Tstg [Maximum Ratings ;Ta=25℃] | -40~+85 ℃ |
| Lead Soldering Temperature Tsol [Maximum Ratings; Ta=25℃; soldering at least 2mm from the encapsulant, within 5s] | 260 ℃ |
| Forward Voltage VF [Optoelectronic Characteristics ;Ta=25℃; Input Input;IF=20mA] | typical ：1.2； max ：1.5 |
| Forward Voltage VF [Optoelectronic Characteristics ;Ta=25℃; Input Input;IF=100mA; Pulse Width ≤100μs; Duty Cycle 1%] | typical ：1.4； max ：1.85 |
| Peak Wavelength λp [Optoelectronic Characteristics ;Ta=25℃; Input Input;IF=20mA] | typical ：940 |
| Reverse Current IR [Optoelectronic Characteristics ;Ta=25℃; Input Input;VR=5V] | max ：10 |
| Dark Current ICEO [Optoelectronic Characteristics; Ta=25℃; Output; Ee=0mW/cm²; VCE=20V] | max ：100 |
| Collector-Emitter Operating Voltage / C-E Saturation Voltage (different source bilingual labels) VCE(SAT) [Optoelectronic Characteristics; Ta=25℃; Output; IC=2mA; Ee=1mW/cm²] | max ：0.4 |
| Rise Time tr [Optoelectronic Characteristics; Ta=25℃; Transfer Characteristics; VCE=5V; IC=1mA; RL=1000Ω] | typical ：15 |
| Fall Time tf [Optoelectronic Characteristics; Ta=25℃; Transfer Characteristics; VCE=5V; IC=1mA; RL=1000Ω] | typical ：15 |
| Photocurrent / Collector Current (different source bilingual labels) IC(ON) [Optoelectrical Characteristics; Ta=25℃; Transfer Characteristics; IF=10mA; VCE=5V] | min ：0.18； typical ：0.8 |
Applications
Key Features
Datasheet
Supplier Information
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