ZOS-T1608-02
ZOS-T1608-02 consists of an infrared-emitting diode and an NPN silicon phototransistor, packaged side by side along a converging optical axis in a black thermoplastic housing. The phototransistor normally receives radiation only from IR. When an object is between them, the phototransistor cannot receive the radiation. For additional component information, refer to IR and PT. Absolute Maximum Ratings. Electro-Optical Characteristics: *2, pulse width≦100μs, duty cycle=1%. Package Dimensions.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Input emitter power Pd [Absolute Maximum Ratings ;Ta=25℃] | 75 mW |
| Input emitter reverse voltage V_R [Absolute Maximum Ratings ;Ta=25℃] | 5 V |
| Input emitter continuous forward current I_F [Absolute Maximum Ratings ;Ta=25℃] | 30 mA |
| Input emitter pulsed forward current I_FP [Absolute Maximum Ratings ;Ta=25℃; Pulse Width ≤100μs, Duty Cycle 1%] | 1 A |
| Output receiver power Pd [Absolute Maximum Ratings ;Ta=25℃] | 75 mW |
| Output receiver collector-emitter voltage V_CEO [Absolute Maximum Ratings ;Ta=25℃] | 35 V |
| Output receiver emitter-collector voltage V_ECO [Absolute Maximum Ratings ;Ta=25℃] | 5 V |
| Output receiver collector current I_C(ON) [Absolute Maximum Ratings ;Ta=25℃] | 20 mA |
| Operating Temperature Topr [Absolute Maximum Ratings ;Ta=25℃] | -25~+85 ℃ |
| Storage Temperature Tstg [Absolute Maximum Ratings ;Ta=25℃] | -40~+100 ℃ |
| Soldering temperature Tsol [Absolute maximum ratings; Ta=25℃; soldering for no more than 5s at least 2mm away from the encapsulant] | 260 ℃ |
| Input forward voltage V_F [Optoelectronic Characteristics ；Ta=25℃；I_F=20mA] | typical ：1.2； max ：1.6 |
| Input forward voltage V_F [Optoelectronic Characteristics ;Ta=25℃;I_F=100mA; Pulse Width ≤100μs, Duty Cycle 1%] | typical ：1.4； max ：1.85 |
| Input forward voltage V_F [Optoelectronic Characteristics ;Ta=25℃;I_F=1A; Pulse Width ≤100μs, Duty Cycle 1%] | typical ：2.6； max ：4.0 |
| Input peak wavelength λp [Optoelectronic Characteristics ；Ta=25℃；I_F=20mA] | typical ：940 |
| Input reverse current I_R [Optoelectronic Characteristics ；Ta=25℃；V_R=5V] | max ：10 |
| Output dark current I_CEO [Optoelectronic Characteristics ；Ta=25℃；Ee=0mW/cm²；V_CE=20V] | max ：100 |
| Output Collector-Emitter Operating Voltage / C-E Saturation Voltage (different source bilingual labels) V_CE(SAT) [Optoelectronic Characteristics ；Ta=25℃；I_C=2mA；Ee=1mW/cm²] | max ：0.4 |
| Transfer characteristics - rise time t_r [Optoelectronic Characteristics ；Ta=25℃；V_CE=5V；I_C=1mA；R_L=1000Ω] | typical ：15 |
| Transfer characteristics - fall time t_f [Optoelectronic Characteristics ；Ta=25℃；V_CE=5V；I_C=1mA；R_L=1000Ω] | typical ：15 |
| Transfer Characteristics Photocurrent / Collector Current (different source bilingual labels) I_C(ON) [Optoelectronic Characteristics ；Ta=25℃；I_F=20mA；V_CE=5V] | min ：0.15 |
| Package specifications | Packing bag: 150PCS; inner box: 4 bags/box; carton: 10 boxes/carton |
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