R3228 ZOS-R3228B-15A-Z2
ZOS-R3228B-15A-Z2 consists of an infrared-emitting diode and a silicon phototransistor, packaged side by side on converging optical axes in a black thermoplastic housing. Normally, the phototransistor receives only radiation from the IR emitter. When an object is between them, it cannot receive the radiation. Refer to IR and PT for further component information. Measurement notes: forward-voltage measurement tolerance ±0.1V; luminous-intensity measurement tolerance ±10%; peak-wavelength measurement tolerance ±1.0nm.
Save to Favorites
Overview
Specifications
| Parameter | Value |
|---|---|
| Input emitter maximum power Pd [Absolute Maximum Ratings ;Ta=25℃] | 75 mW |
| Input emitter maximum reverse voltage V_R [Absolute Maximum Ratings ;Ta=25℃] | 5 V |
| Input emitter maximum continuous forward current I_F [Absolute Maximum Ratings ;Ta=25℃] | 50 mA |
| Input emitter maximum pulsed forward current I_FP [Absolute Maximum Ratings ;Ta=25℃; Pulse Width ≤100μs, Duty Cycle 1%] | 1 A |
| Output receiver maximum power Pd [Absolute Maximum Ratings ;Ta=25℃] | 75 mW |
| Output receiver collector-emitter voltage V_CEO [Absolute Maximum Ratings ;Ta=25℃] | 30 V |
| Output receiver emitter-collector voltage V_ECO [Absolute Maximum Ratings ;Ta=25℃] | 5 V |
| Output receiver collector current I_C(ON) [Absolute Maximum Ratings ;Ta=25℃] | 10 mA |
| Operating Temperature Topr [Absolute Maximum Ratings ;Ta=25℃] | -25~+85 ℃ |
| Storage Temperature Tstg [Absolute Maximum Ratings ;Ta=25℃] | -40~+85 ℃ |
| Soldering temperature Tsol [Absolute maximum ratings; Ta=25℃; soldering for no more than 5s at least 2mm away from the encapsulant] | 260 ℃ |
| Input forward voltage V_F [Optoelectrical Characteristics; Ta=25℃; I_F=20mA; measurement tolerance ±0.1V] | typical ：1.2； max ：1.6 |
| Input peak wavelength λp [Optoelectrical Characteristics; Ta=25℃; I_F=20mA; measurement tolerance ±1.0nm] | typical ：940 |
| Input reverse current I_R [Optoelectronic Characteristics ；Ta=25℃；V_R=5V] | max ：10 |
| Output dark current I_CEO [Optoelectronic Characteristics ；Ta=25℃；Ee=0mW/cm²；V_CE=20V] | max ：10 |
| Output Collector-Emitter Operating Voltage / C-E Saturation Voltage (different source bilingual labels) V_CE(SAT) [Optoelectronic Characteristics ；Ta=25℃；I_C=2mA；Ee=1mW/cm²] | max ：0.4 |
| Transfer characteristics - rise time t_r [Optoelectronic Characteristics ；Ta=25℃；V_CE=5V；I_C=1mA；R_L=1000Ω] | typical ：400 |
| Transfer characteristics - fall time t_f [Optoelectronic Characteristics ；Ta=25℃；V_CE=5V；I_C=1mA；R_L=1000Ω] | typical ：400 |
| Transfer Characteristics Photocurrent / Collector Current (different source bilingual labels) I_C(ON)(B) [Optoelectronic Characteristics ；Ta=25℃；I_F=10mA；V_CE=5V] | min ：0.18； max ：0.3 |
| Transfer Characteristics Photocurrent / Collector Current (different source bilingual labels) I_C(ON)(C) [Optoelectronic Characteristics ；Ta=25℃；I_F=10mA；V_CE=5V] | min ：0.25； max ：0.44 |
| Rank Photocurrent / Collector Current Ic(on) [Setting BIN2;V_CE=5V;I_F=20mA] | 0.1~0.32 mA |
| Rank Photocurrent / Collector Current Ic(on) [Setting BIN3;V_CE=5V;I_F=20mA] | 0.32~0.55 mA |
| Rank Photocurrent / Collector Current Ic(on) [Setting BIN4;V_CE=5V;I_F=20mA] | 0.55~0.78 mA |
| Quantity [Carrier Tape] | 2000 pcs/reel |
Applications
Key Features
Datasheet
Supplier Information
Related Products
-
Lithium Tantalate Wafer LT
Optical Crystals
Jmwafer
Diameter [Lithium Tantalate Single-Crystal Substrate LiTaO3/LT (2~6 Inches)]: 2 inch - 50.8mm Diameter [Lithium Tantalate Single-Crystal Substrate LiTaO3/LT (2~6 Inches)]: 3 inch - 76.2mm Diameter [Lithium Tantalate Single-Crystal Substrate LiTaO3/LT (2~6 Inches)]: 4 inch - 100mm
LiTaO₃ Usually Colorless/Pale Yellow,Trigonal Distorted-Perovskite Structure,Excellent Electro-Optic,Piezoelectric/Pyroelectric Properties.
-
Lithium Niobate Wafer LN
Optical Crystals
Jmwafer
Diameter [Lithium Niobate Single-Crystal Substrate LiNbO3/LN (2~6 Inches)]: 2 inch - 50.8mm Diameter [Lithium Niobate Single-Crystal Substrate LiNbO3/LN (2~6 Inches)]: 3 inch - 76.2mm Diameter [Lithium Niobate Single-Crystal Substrate LiNbO3/LN (2~6 Inches)]: 4 inch - 100mm
LiNbO₃ Trigonal,Good Symmetry/Structural Stability,Piezoelectric,Ferroelectric,Photoelectric,Acousto-Optic/Nonlinear Properties,Curie up to1140℃,High Mechanical Quality/Chemical Stability.
-
Polycrystalline Diamond
Optical Crystals
Jmwafer
Polycrystalline Diamond - Dimensions: 10 mm × 10 mm Polycrystalline Diamond - Dimensions: 1 inch - 25.4mm Polycrystalline Diamond - Dimensions: 2 inch - 50.8mm
Diamond:Tetrahedrally Packed Carbon,Extremely Hard,Excellent Thermal Conductivity/Broad Optical Transparency,Hardest Known Natural Material,Also Synthesized at High Pressure/Temperature.
-
Single-Crystal Diamond
Optical Crystals
Jmwafer
Single-Crystal Diamond - Diameter: 5 mm × 5 mm Single-Crystal Diamond - Diameter: 10 mm × 10 mm Single-Crystal Diamond - Diameter: 20 mm × 20 mm
Diamond:Tetrahedrally Packed Carbon,Extremely Hard,Excellent Thermal Conductivity/Broad Optical Transparency,Hardest Known Natural Material,Also Synthesized at High Pressure/Temperature.
-
Fluorophlogopite
Optical Crystals
Jmwafer
Fluoromica Substrate - Dimensions: 5 mm × 5 mm Fluoromica Substrate - Dimensions: 10 mm × 10 mm Fluoromica Substrate - Dimensions: 20 mm × 20 mm
Synthetic Fluorophlogopite Mica KMg3(AlSi3O10)F2,Melts1375℃/Long-Term up to1100℃,Colorless Transparent,Strong Acid-Alkali Inert,Stable/Pure/Complete Structure/Flat Cleavage,Easily Split Thin.
Related Articles
Raybowlaser, a professional manufacturer of high-power laser chips, has officially launched its upgraded new-generation 1470nm high-performance laser chip. Achieving groundbreaking progress in rated output power and wall-plug efficiency (WPE), this innovative laser chip delivers superior and reliable core light source solutions for medical cosmetology, industrial processing, agricultural applications and scientific research equipment.
Electro-optic deflectors (EODs) are optical devices used to steer or deflect light beams by applying an electric field to a specialized optical crystal. Unlike mechanical beam steering systems that rely on moving mirrors, electro-optic deflectors enable high-speed, non-mechanical beam control with exceptional precision and responsiveness. They are widely used in laser scanning, optical communications, microscopy, laser printing, spectroscopy, and scientific research, where rapid and accurate laser beam positioning is essential.
Founded in 2004, Wuhan Union Optic Inc. is a National Specialized, Refined, Unique & Innovative "Little Giant" high-tech enterprise located in Wuhan East Lake High-Tech Development Zone.
Precise spectral screening is essential for high-precision medical detection, spectroscopic analysis and intelligent imaging systems. Tailored for visible and near-infrared spectral separation, the SP900 shortpass optical filter delivers high-efficiency light transmission and deep infrared blocking performance. It effectively eliminates stray light interference, improves signal-to-noise ratio (SNR), and serves as a core optical component for biomedical instruments, scientific analysis equipment and machine vision systems.
Loading...
Name
Phone
Organization
Use Case
Database Platform