R3227 ZOS-R3227S17-TR8
ZOS-R3227S17-TR8, designated ZOS-R3227-S17-TR8 in the English source, is a light-reflection switch containing a gallium-arsenide infrared LED transmitter and a short-range, highly photosensitive NPN phototransistor receiver operating in the infrared range. Both components are mounted side by side in a plastic housing. Device Selection Guide (heading following the original application section). Notes: all dimensions are in millimeters; unspecified dimensional tolerances are ±0.3mm. Electro-optical characteristics. Absolute maximum ratings. *1 Tested at an ambient25°C; the English note states 'below25 Free Air Temperature'. *2 Pulse width≦100μs, duty cycle=1%. *3 Solder within5s at a distance greater than2mm from the encapsulant. Measurement notes: forward-voltage measurement tolerance±0.1V; luminous-intensity measurement tolerance±10%; peak-wavelength measurement tolerance±1.0nm.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Input emitter maximum power Pd [Absolute Maximum Ratings ;Ta=25℃] | 75 mW |
| Input emitter maximum reverse voltage V_R [Absolute Maximum Ratings ;Ta=25℃] | 5 V |
| Input emitter maximum continuous forward current I_F [Absolute Maximum Ratings ;Ta=25℃] | 50 mA |
| Input emitter maximum pulsed forward current I_FP [Absolute Maximum Ratings ;Ta=25℃; Pulse Width ≤100μs, Duty Cycle 1%] | 1 A |
| Output receiver maximum power Pd [Absolute Maximum Ratings ;Ta=25℃] | 75 mW |
| Output receiver collector-emitter voltage V_CEO [Absolute Maximum Ratings ;Ta=25℃] | 30 V |
| Output receiver emitter-collector voltage V_ECO [Absolute Maximum Ratings ;Ta=25℃] | 5 V |
| Output receiver collector current I_C(ON) [Absolute Maximum Ratings ;Ta=25℃] | 50 mA |
| Operating Temperature Topr [Absolute Maximum Ratings ;Ta=25℃] | -20~+70 ℃ |
| Storage Temperature Tstg [Absolute Maximum Ratings ;Ta=25℃] | -30~+80 ℃ |
| Soldering temperature Tsol [Absolute maximum ratings; Ta=25℃; soldering for no more than 5s at least 2mm away from the encapsulant] | 260 ℃ |
| Input forward voltage V_F [Optoelectrical Characteristics; Ta=25℃; I_F=20mA; measurement tolerance ±0.1V] | typical ：1.2； max ：1.6 |
| Input peak wavelength λp [Optoelectrical Characteristics; Ta=25℃; I_F=20mA; measurement tolerance ±1.0nm] | typical ：940 |
| Input reverse current I_R [Optoelectronic Characteristics ；Ta=25℃；V_R=5V] | max ：10 |
| Output dark current I_CEO [Optoelectronic Characteristics ；Ta=25℃；Ee=0mW/cm²；V_CE=20V] | max ：10 |
| Output Collector-Emitter Operating Voltage / C-E Saturation Voltage (different source bilingual labels) V_CE(SAT) [Optoelectronic Characteristics ；Ta=25℃；I_C=2mA；Ee=1mW/cm²] | max ：0.4 |
| Transfer characteristics - rise time t_r [Optoelectronic Characteristics ；Ta=25℃；V_CE=5V；I_C=1mA；R_L=1000Ω] | typical ：400 |
| Transfer characteristics - fall time t_f [Optoelectronic Characteristics ；Ta=25℃；V_CE=5V；I_C=1mA；R_L=1000Ω] | typical ：400 |
| Transfer Characteristics Photocurrent / Collector Current (different source bilingual labels) I_C(ON)(5) [Optoelectronic Characteristics ；Ta=25℃；I_F=10mA；V_CE=5V] | min ：900； max ：1100 |
| Transfer Characteristics Photocurrent / Collector Current (different source bilingual labels) I_C(ON)(6) [Optoelectronic Characteristics ；Ta=25℃；I_F=10mA；V_CE=5V] | min ：1100； max ：1300 |
| Rank Photocurrent / Collector Current Ic(on) [Setting NA;V_CE=5V;I_F=10mA] | 180~440 uA |
| Rank Photocurrent / Collector Current Ic(on) [Setting B1 BIN;V_CE=5V;I_F=10mA] | 180~250 uA |
| Rank Photocurrent / Collector Current Ic(on) [Setting B2 BIN;V_CE=5V;I_F=10mA] | 230~300 uA |
| Rank Photocurrent / Collector Current Ic(on) [Setting B BIN;V_CE=5V;I_F=10mA] | 180~300 uA |
| Rank Photocurrent / Collector Current Ic(on) [Setting C BIN;V_CE=5V;I_F=10mA] | 250~440 uA |
| Rank Photocurrent / Collector Current Ic(on) [Setting C2 BIN;V_CE=5V;I_F=10mA] | 310~440 uA |
| Quantity [Carrier Tape] | 2000 pcs/reel |
| Chip Material [Device No. IR] | GaAs |
| Chip Material [Device No. PT] | Silicon |
Applications
Key Features
Datasheet
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