R2016 ZOS-R2016B-08D-Z4
ZOS-R2016B-08D-Z4 consists of a laser-emitting diode and a silicon phototransistor, packaged side by side on converging optical axes in a black thermoplastic housing. The phototransistor normally receives radiation only from IR. When an object is in between, however, it cannot receive the radiation. For more component information, refer to IR and PT.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Optical Output Power P_OP [Absolute Maximum Ratings; Ta=25℃; the source table's three numerical columns are undefined and retained from left to right] | 5 / 6 / — |
| Threshold Current Ith [Absolute Maximum Ratings; Ta=25℃; the source table's three numerical columns are undefined and retained from left to right] | — / 1 / 2 |
| Operating Current Iop [Absolute Maximum Ratings; Ta=25℃; the source table's three numerical columns are undefined and retained from left to right] | — / 7 / — |
| Differential resistance Rs [Absolute Maximum Ratings; Ta=25℃; the source table's three numerical columns are undefined and retained from left to right] | — / 60 / 80 |
| Operating Voltage V_op [Absolute Maximum Ratings; Ta=25℃; the source table's three numerical columns are undefined and retained from left to right] | 1.8 / 2.1 / 2.4 |
| Slope Efficiency η_s [Absolute Maximum Ratings; Ta=25℃; the source table's three numerical columns are undefined and retained from left to right] | 0.8 / 1 / — |
| Power Conversion Efficiency PCE [Absolute Maximum Ratings; Ta=25℃; the source table's three numerical columns are undefined and retained from left to right] | 38 / 41 / — |
| Wavelength λ_peak [Absolute Maximum Ratings; Ta=25℃; the source table's three numerical columns are undefined and retained from left to right] | 930 / 940 / 950 |
| Spectral Width (RMS) Δλ [Absolute Maximum Ratings; Ta=25℃; the source table's three numerical columns are undefined and retained from left to right] | — / 1 / 2.5 |
| Beam Full Divergence (D86) ϕ [Absolute Maximum Ratings; Ta=25℃; the source table's three numerical columns are undefined and retained from left to right] | 16 / 20 / 24 |
| ESD tolerance, human body model [Absolute Maximum Ratings; Ta=25℃; the source table's three numerical columns are undefined and retained from left to right; only the first numerical column contains 260] | 260 V |
| Operating Temperature Operating Temperature Topr [Absolute Maximum Ratings ;Ta=25℃] | -25~+85 ℃ |
| Storage Temperature Tstg [Absolute Maximum Ratings ;Ta=25℃] | -40~+100 ℃ |
| Lead Soldering Temperature Tsol [Absolute maximum ratings; Ta=25℃; soldering for no more than 5s at least 2mm away from the encapsulant] | 260 ℃ |
| Input forward voltage V_F [Optoelectronic Characteristics ；Ta=25℃；I_F=20mA] | typical ：1.8； max ：2.0 |
| Input forward voltage V_F [Optoelectronic Characteristics ;Ta=25℃;I_F=100mA; Pulse Width ≤100μs, Duty Cycle 1%] | typical ：1.4； max ：1.85 |
| Input peak wavelength λp [Optoelectronic Characteristics ；Ta=25℃；I_F=20mA] | typical ：940 |
| Input reverse current I_R [Optoelectronic Characteristics ；Ta=25℃；V_R=5V] | max ：10 |
| Output dark current I_CEO [Optoelectronic Characteristics ；Ta=25℃；Ee=0mW/cm²；V_CE=20V] | max ：30 |
| Output Collector-Emitter Operating Voltage / C-E Saturation Voltage (different source bilingual labels) V_CE(SAT) [Optoelectronic Characteristics ；Ta=25℃；I_C=2mA；Ee=1mW/cm²] | max ：0.4 |
| Transfer characteristics - rise time t_r [Optoelectronic Characteristics ；Ta=25℃；V_CE=5V；I_C=1mA；R_L=1000Ω] | typical ：15 |
| Transfer characteristics - fall time t_f [Optoelectronic Characteristics ；Ta=25℃；V_CE=5V；I_C=1mA；R_L=1000Ω] | typical ：15 |
| Transfer Characteristics Photocurrent / Collector Current (different source bilingual labels) I_C(ON) [Optoelectronic Characteristics ；Ta=25℃；I_F=10mA；V_CE=5V] | min ：0.18； typical ：1 |
Applications
Key Features
Datasheet
Supplier Information
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