R0905 R0905-07
ZOS-R0905-07 consists of an infrared-emitting diode and an NPN silicon phototransistor, packaged side by side along a converging optical axis in a black thermoplastic housing. The phototransistor normally receives radiation only from IR. When an object is between them, the phototransistor cannot receive the radiation. For additional component information, refer to IR and PT.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Reverse Voltage | 5V |
| Forward Current | 50mA |
| Collector-Emitter Voltage | 30V |
| Emitter-Collector Voltage | 5V |
| Power | 75mW |
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Datasheet
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