GaSe, Gallium selenide
GaSe gallium selenide crystal is a nonlinear optical material with a transmittance range of 0.65 to 18 μm. The terahertz oscillation of GaSe (gallium selenide) crystals can reach a very wide frequency domain, up to 41THz. GaSe is a negative uniaxial layered semiconductor crystal with a hexagonal structure of 62m spatial point groups, and a bandgap width of 2.2eV at 300K. GaSe crystal has a high damage resistance threshold, a large nonlinear coefficient (54pm/V), a very suitable transparent range, and an ultra-low absorption coefficient, making it a very important solution for mid infrared broadband electromagnetic wave oscillation. Due to the use of laser sources below 20 femtoseconds for broadband terahertz oscillation and detection, the GaSe emission detection system can achieve comparable or even better results than ZnTe. By selecting the thickness of GaSe crystals, we can achieve frequency selective control of THz waves. Note: The cleavage surface of the GaSe crystal is (001), so a significant limitation on the use of this crystal is soft and fragile.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Transmission range | 0.62 – 20 µm |
| Nonlinear coefficient d22 [@10.6µm] | d22= 54 @10.6 µm |
| Syngony | Hexagonal system, 6m2 point group |
| Lattice parameters | a=3.74, c=15.89 |
| Refractive index [@10.6µm] | no=2.6975, ne=2.3745 @10.6 µm |
| Refractive index [@5.3µm] | no=2.7233, ne=2.3966 @5.3 µm |
| Damage threshold [@1064nm；t=10ns] | 30 MW/cm2@1064 nm (t=10 ns) |
| Departure angle [@5.3µm] | 4.1° @5.3 µm |
| Moh's hardness | 2 |
| Density | 5.03g/cm3 |
| Band-gap width (at 300K) [at300K；at 300K] | 2.2eV |
| Dimensional tolerance | ±0.1mm |
| Optical aperture | ≧90% |
| Wavefront distortion [@633nm] | ≦λ/8 @ 633nm |
| Flatness [@633nm] | λ/8 @ 633nm |
| Finish | 20/10 |
| Parallelism | ≦30" |
| Verticality | ≦15 ′ |
| Angular deviation | △θ≦0.25°,△φ≦0.25° |
Applications
Key Features
Datasheet
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