Home All Products Test and Measurements Optical Metrology Fully Automatic Mueller Matrix Ellipsometer MetronME-XT-300
Fully Automatic Mueller Matrix Ellipsometer MetronME-XT-300
Optical Metrology

Fully Automatic Mueller Matrix Ellipsometer MetronME-XT-300

Supplier
Ideaoptics
Part Number
MetronME-XT-300
Category
Optical Metrology
Origin
China

Ideaoptics' fully automatic MetronME-XT-300 Mueller-matrix ellipsometer uses multilayer-film interference and ellipsometry to characterize thickness and optical constants of transparent and semitransparent dielectric films and metal films, as well as bulk-material optical constants. It also analyzes isotropic/anisotropic film thicknesses, optical nanograting constants, and structures of one-/two-dimensional nanogratings. Automatic alignment uses an alignment sensor, and automated mapping supports4-12-inch substrates for multipoint measurement. Applications include semiconductors, LCD panels, solar cells, and optical coatings.

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Overview

Ideaoptics' fully automatic MetronME-XT-300 Mueller-matrix ellipsometer uses multilayer-film interference and ellipsometry to characterize thickness and optical constants of transparent and semitransparent dielectric films and metal films, as well as bulk-material optical constants. It also analyzes isotropic/anisotropic film thicknesses, optical nanograting constants, and structures of one-/two-dimensional nanogratings. Automatic alignment uses an alignment sensor, and automated mapping supports4-12-inch substrates for multipoint measurement. Applications include semiconductors, LCD panels, solar cells, and optical coatings.

Specifications

ParameterValue
Instrument ConfigurationDual Rotating Compensator Type
Measurement Wavelength RangeMaximum Range 193-1690nm (Options:245-1000nm,193-1000nm,245-1690nm,193-1690nm)
Measurement Range1nm~10μm
Wavelength Interval [@VIS；@1000-1690nm]＜0.78nm @VIS, < 3.5nm @1000-1690nm
Measurement ParametersMueller Matrix, Psi&Delta, N&C&S, R&T, Rp/Rs, Tp/Ts, DOP
Large-Spot Dimensions1-8mm可调
Microspot Size(Optional)≤200μm
Ultramicrospot Size(Optional)≤80μm
Angle of IncidenceAutomatically Variable 45°~90°, or Fixed 65°
Single-Measurement Time≤10s
Focusing MethodAutomatic Focusing
Translation Stage TravelXY Travel≥200mm
Mapping MethodParameterized, Customizable Scan Paths;Generates Film Thickness/Refractive Index/MSE Distribution Maps
Heating/Cooling Stage ( Optional )-190℃ to 500℃
Data Acquisition and Analysis SoftwareSupports multimode data acquisition and single-/multilayer film thickness measurement;Excel/TXT/CSV formats;hundreds of built-in optical constants for common semiconductors, dielectrics, metals, polymers, and oxides;user-defined material libraries and batch import;Tauc Lorentz, Cauchy, Sellmeier, Lorentz, and Drude dispersion models for fitting material optical constants;and anisotropic and depolarizing sample characterization.
Film Thickness Repeatability (1σ) [100nm Silicon-Based SiO₂ Film ,30 Measurements]better than 0.005nm(100nm Silicon-Based SiO₂ Film ,30 Measurements )
Refractive Index Repeatability (1σ) [100nm Silicon-Based SiO2 Film ,n@633nm, 30 Measurements]better than 0.0002 (100nm Silicon-Based SiO2 Film ,n@633nm, 30 Measurements )

Applications

Advanced semiconductor processes: as CMOS devices continue to shrink, conventional SiO₂ gate dielectrics have reached physical limits because of unacceptable tunneling leakage currents and inherent reliability issues. High-dielectric-constant materials such as HfO₂ have therefore become a focus. Studying the electrical properties of high-dielectric films after different annealing processes is a key requirement for precise control of gate performance and memory reliability in advanced processes. This includes checking whether samples remain amorphous after processing, deriving dielectric constants from n&k and measuring equivalent oxide thickness. Measuring dispersion characteristics and n&k values of isolation layers such as SiO₂/SiNₓ also ensures optical matching between 3D NAND stacked layers to avoid signal interference. Optical components: in the composite multilayer antireflection coatings commonly used in AR/VR glasses and camera lenses, the thickness and n&k values of each layer are key variables determining whether the two functions meet requirements. Nondestructive, accurate joint measurement of film thickness and n&k is therefore needed to improve processes and yield. In particular, accurately determining the thickness and application-specific optical constants of ultrathin transition layers in multilayer antireflection coatings, such as MgF₂ at 5~10nm, and ultrathin corrosion-resistant optical films for infrared windows at 3~8nm supports optical coating design requirements and precise control of optical transmittance and reflectance. Photovoltaic cells: thin-film optoelectronic materials. Determining the thickness and application-specific optical constants of ultrathin layers—including the ultrathin tunneling oxide in TOPCon photovoltaic cells (SiO₂, 1~5nm, a photovoltaic-specific ultrathin film), the ultrathin intrinsic amorphous silicon layer in HJT cells, ultrathin organic emissive layers in OLED devices (EML, 5~9nm), and ultrathin encapsulation barrier layers (Al₂O₃, 3~7nm)—supports control of optoelectronic performance. These constants mainly include n&k values and dedicated parameters such as refractive-index uniformity of photovoltaic films and optical transmission coefficients of OLED films. They directly relate to photovoltaic conversion efficiency and are key to process optimization in the industry.

Key Features

Dual-rotating-compensator technology. A single measurement obtains 16 full Mueller-matrix spectra and measures Muller Matrix, Psi&Delta (N&C&S), reflectance R, transmittance T, polarized Rp/Rs, polarized Tp/Ts and DOP. Broad coverage: up to 193~1690nm with multiple range options. Reflection/transmission ellipsometry: optional automatically variable 45°–90° incidence and autofocus accurately characterize wafers and optical glass respectively. Fully automatic 4~12-inch wafer Mapping: motorized stage accommodates 4~12-inch wafers, with parameterized/custom scan paths and autofocus support. 200μm/80μm microspots: selectable 200μm or 80μm spots and visual alignment provide precise microregion measurements. Accessories: vacuum pump holds samples securely, optional -190℃ to 500℃ heating/cooling stage, and application-specific hardware/software expansion. Powerful analysis software includes optical constants for hundreds of typical materials and convenient interaction.

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Supplier Information

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Ideaoptics
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Shanghai Ideaoptics Co., Ltd. is a national-level specialized and sophisticated 'Little Giant' enterprise, a deep-spectrum technology innovator. Devoted to the micro-nano optoelectronic field, it develops intelligent full-spectrum technology integrating photonics and AI, building an internationally leading deep-spectrum platform. The company provides comprehensive solutions from technology to products, including micro spectrometers, angle-resolved spectrometers, and confocal Raman spectrometers, widely applied in IC chips, optical chips, biochips, AR/VR, and advanced displays. Through joint R&D centers with universities, Ideaoptics continuously launches breakthrough products, serving over 3,000 customers and cooperating with 170+ semiconductor, advanced materials, and biomedical enterprises, aiming to advance photonic integration and empower semiconductor manufacturing.

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