High-speed avalanche photodiode 50um APD
An avalanche photodiode (APD) is a highly sensitive semiconductor electronic device that converts light into electrical energy through the photoelectric effect.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Detection range λd [Vr=VBR-3V] | min:1000 nm；max:1680 nm |
| Photosensitive surface φ | typical:50 μm |
| Responsivity Re [λ=1.55μm, φ0=1μw, Vr=VBR-3V] | min:10 A/W |
| Multiplication factor M [λ=1.55μm, φ0=1μw, Vr=VBR-3V] | min: 10 |
| Max Gain Mmax | min: 20 |
| Reverse breakdown voltage VBR [ID=10μA, φe=0μw] | min:40 V；max:50 V |
| Dark Current Id [VR=VBR-3V, φe=0] | max:10 nA |
| Capacitance C [Vr=VBR-3V] | max:0.5 pF |
| -3db Cutoff frequency BW [VR=VBR-3V, RL=50Ω / -3db] | min:2.5 GHz |
| Operating voltage range | VBR -VP |
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Key Features
Datasheet
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