Butterfly-packaged avalanche photodiode for lidar APD
This APD photodiode series uses high-performance APD semiconductor chips. The temperature-control circuitry and butterfly package with a built-in thermoelectric cooler keep the APD chip stable across ambient temperatures, greatly simplifying APD power-supply and weak-signal detection circuitry.
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Overview
Specifications
| Parameter | Value |
|---|---|
| 波长范围 λ | min:1100 nm；max:1700 nm |
| 探测面积 Φ | typical:50 um |
| 响应度 R [Vr=0V, λ=1550nm] | min:0.85 A/W |
| 暗电流 I_D [Vr=0V,T=25℃] | typical:5 nA；max:20 nA |
| 带宽(-3dB) BW [Vr=0V, λ=1510nm / -3dB] | min:0.5 GHz；typical:2.0 GHz |
| 电流 C [Vr=0V,f=1MHz] | 0.5 |
| 工作温度 Top | -20~70 ℃ |
| 存储温度 Tst | -40~85 ℃ |
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Datasheet
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