Knight+ Series Picosecond deep-UV 266 nm Laser Knight-DUV-5

Knight+ Series Picosecond deep-UV 266 nm Laser Knight-DUV-5

Supplier
Klightlaser
Part Number
Knight-DUV-5
Category
UV Light Systems
Origin
China

The Knight+ series industrial picosecond 266nm laser uses a compact integrated design and an upgraded control system for improved power stability and consistent optical performance. A proprietary picosecond fiber seed source, free-space solid-state amplification and efficient frequency conversion produce high-repetition-rate picosecond deep-ultraviolet pulses. Real-time multiphysics data monitoring and recording support remote diagnosis and predictive maintenance. Performance is benchmarked against comparable imported products. The Knight+ picosecond deep-ultraviolet laser supports custom dimensions and optical parameters, with output up to 10W and pulse frequency of 60MHz-120MHz, for semiconductor wafer-defect inspection in advanced processes.

Specification Snapshot
Center Wavelength [Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]
266 nm
Center Wavelength [Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]
266 nm
Average Power [Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]
5 W
Average Power [Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]
5 W
Pulse Width [Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]
10~13 ps
Pulse Width [Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]
10~13 ps
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Overview

The Knight+ series industrial picosecond 266nm laser uses a compact integrated design and an upgraded control system for improved power stability and consistent optical performance. A proprietary picosecond fiber seed source, free-space solid-state amplification and efficient frequency conversion produce high-repetition-rate picosecond deep-ultraviolet pulses. Real-time multiphysics data monitoring and recording support remote diagnosis and predictive maintenance. Performance is benchmarked against comparable imported products. The Knight+ picosecond deep-ultraviolet laser supports custom dimensions and optical parameters, with output up to 10W and pulse frequency of 60MHz-120MHz, for semiconductor wafer-defect inspection in advanced processes.

Specifications

ParameterValue
Center Wavelength [Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]266 nm
Center Wavelength [Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]266 nm
Average Power [Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]5 W
Average Power [Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]5 W
Pulse Width [Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]10~13 ps
Pulse Width [Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]10~13 ps
Single-pulse energy [Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]40-80 nJ
Single-pulse energy [Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]500-5000 nJ
Peak Power [Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]1.3-8 MW
Peak Power [Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]15-500 MW
Repetition Rate [Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]60-120 MHz
Repetition Rate [Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]1-10 MHz
Power stability [RMS / Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]<1 %
Power stability [RMS / Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]<1 %
Pulse Stability [RMS / Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]<1 %
Pulse Stability [RMS / Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]<1 %
Beam quality M² [Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]≤1.2
Beam quality M² [Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]≤1.2
Spot diameter [1/e² / Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]2.0±0.3 mm
Spot diameter [1/e² / Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]2.0±0.3 mm
Spot roundness [Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]>90 %
Spot roundness [Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]>90 %
Polarization method [Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]Horizontal
Polarization method [Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]Horizontal
Polarization ratio [Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]>100:1
Polarization ratio [Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]>100:1
Optical output power adjustment range [Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]0~100 %
Optical output power adjustment range [Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]0~100 %
Frequency following function [Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]Supported
Frequency following function [Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]Supported
Operating Voltage [50/60 Hz / Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]100~240(50/60 Hz)
Operating Voltage [50/60 Hz / Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]100~240(50/60 Hz)
Communication Protocol [Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]RS-232, Ethernet, USB
Communication Protocol [Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]RS-232, Ethernet, USB
Cooling method [Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]Water cooling Water
Cooling method [Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]Water cooling Water
Operating Temperature [Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]+10~+35 °C
Operating Temperature [Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]+10~+35 °C
Shipping dimensions [W×D×H / Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]700 mm × 500 mm × 200 mm
Shipping dimensions [W×D×H / Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]700 mm × 500 mm × 200 mm
Shipping weight [Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]70~80 kg
Shipping weight [Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]70~80 kg
Shipping temperature [Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]-20~+60°C
Shipping temperature [Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]-20~+60°C
Shipping relative humidity [Configuration in the same source-table column: repetition rate 60-120 MHz; single-pulse energy 40-80 nJ]10~80 %
Shipping relative humidity [Configuration in the same source-table column: repetition rate 1-10 MHz; single-pulse energy 500-5000 nJ]10~80 %

Applications

Photomask defect inspection; Unpatterned wafer defect inspection; Nanopatterned wafer defect inspection

Key Features

All-in-one design; independently developed high-frequency seed source; proprietary software and hardware control system; multistage compensation for constant power output; adaptive pointing-stabilization system; real-time multiphysics data monitoring and recording; remote diagnostics and predictive maintenance; good stability and consistency.

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Supplier Information

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Klightlaser
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Founded in 2021 by Dr. Bao Qiaoliang, a globally highly cited scientist, Klight Laser has grown into a national high-tech enterprise. The company focuses on the R&D and production of ultrafast ultraviolet and deep ultraviolet lasers (wavelengths: 355nm/266nm/213nm/193nm), providing deep ultraviolet light sources for semiconductor wafer defect detection (particle detection, bright/dark field detection) or mask inspection equipment. Klight's high-repetition-rate picosecond deep ultraviolet lasers fully match the technical specifications of international counterparts, independently developed with multiple core patented technologies and supplemented by intelligent control systems, offering customized light source matching services for domestic wafer inspection equipment integrators. Additionally, the company provides customized flexible micro-machining solutions in the form of laser modules, and has expanded into multiple application fields such as new energy, pan-semiconductor, and medical aesthetics.

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