Low-light EBCMOS
EBCMOS (Electron Bombardment Complementary Metal Oxide Semiconductor) devices provide clear target imaging under extremely weak starlight or even lower illumination. Their low noise and high temporal and spatial resolution enabled by nanosecond gating offer advantages that current solid-state imaging devices cannot replace. EBCMOS is a new digital low-light imaging device with small size, low weight, high sensitivity and operation at extremely low illumination, making research on these devices an important direction for low-light imaging technology. An EBCMOS sensor is a single-photon sensor with high image quality and sensitivity. It is a new type of image intensifier in which a special CMOS imager replaces the MCP and phosphor screen.
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Overview
Specifications
| Parameter | Value |
|---|---|
| 高量子效率 [@450nm] | 95%@450nm |
| 分辨率 | 2048×2048 |
| 像素尺寸 | 11 μm × 11 μm |
| 超高动态范围 | 93dB |
| 支持multiple种触发Function模式 | Standard, synchronous, global and software triggering |
| 成像帧频 | ≥30Hz |
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Key Features
Datasheet
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