RTP Electro-optic crystal
RTP, or rubidium titanyl phosphate with formula RbTiOPO₄, is widely used in electro-optic applications requiring low switching voltage. It offers stable mechanical and chemical properties, large nonlinear optical and electro-optic coefficients, a high laser-damage threshold, high dielectric constant and resistivity, a broad transmission range, low piezoelectric ringing, low insertion loss, low deliquescence and suitability for high-frequency operation. RTP is widely used in lasers and electro-optic modulation. It supports a variety of electro-optic devices, with medium- and low-power lasers representing an important market, including high-repetition-rate Q-switched lasers, mode-locked pulsed lasers and Er:YAG lasers. Electro-optic modulation is a major function, enabling electro-optic Q-switches, phase modulators, pulse selectors and cavity dumpers. RTP has become a popular electro-optic Q-switch material and is widely applicable to industrial laser processing, laser medicine, laser ranging, scientific exploration and defense.
Overview
Specifications
| Parameter | Value |
|---|---|
| Dimension tolerance | ±0.1mm |
| Flatness [@633nm] | <λ/8@633nm |
| Surface Quality | 10/5 S/D |
| Parallelism | <30 arcsec |
| Perpendicularity | <30 arcmin |
| Angle Tolerance | Δθ<0.5°,ΔΦ<0.5° |
| Coating | Antireflection coating |
| Clear Aperture Dimension | >90% Central region |
| Wavefront distortion [@633nm] | <λ/8@633nm |
| Crystal Structure | Orthorhombic |
| Lattice parameters | a=12.96Å,b=10.56Å,c=6.49Å |
| Density | 3.6g/cm³ |
| Melting point | ~1000℃ |
| Ferroelectric transition temperature | ~810℃ |
| Mohs hardness | ~5 |
| Coefficient of thermal expansion | a₁=1.01× 10⁻⁵,a₂=1.37× 10⁻⁵,a₃=-4.17 ×10⁻⁶ |
| Hygroscopicity | No |
| Dielectric constant | 13 |
| Colors | Colorless |
| Ionic conductivity (room temperature, 10kHz) | 10⁻⁸ S/cm |
| Transparency range | 350-4500nm |
| Extinction ratio [@633nm] | >20dB@633nm |
| Sellmeier equation | nₓ²=2.15559+0.93307[1-(0.20994/λ)²]-0.01452λ² |
| Sellmeier equation | n_y²=2.38494+0.73603[1-(0.23891/λ)²]-0.01583λ² |
| Sellmeier equation | n_z²=2.27723+1.11030[1-(0.23454/λ)²]-0.01995λ² |
| Electro-optic constant r₃₃ [Y-cut] | r₃₃=38.5pm/V |
| Electro-optic constant r₃₃ [X-cut] | r₃₃=35pm/V |
| Electro-optic constant r₂₃ [X-cut] | r₂₃=12.5pm/V |
| Electro-optic constant r₁₃ [X-cut] | r₁₃=10.6pm/V |
| 1064nm Static Half-Wave Voltage | 4x4x20mm: 1600V |
| 1064nm Static Half-Wave Voltage | 6x6x20mm: 2400V |
| 1064nm Static Half-Wave Voltage | 9x9x20mm: 3600V |
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