LiNbO₃ Nonlinear crystal
LiNbO₃ (lithium niobate) is a negative uniaxial nonlinear crystal in space group R3c (C9), with a transmission range of 400~5000 nm. It also offers a large effective nonlinear coefficient, easy growth, low cost, stable physical and chemical properties, and resistance to deliquescence. It is widely used in dual-frequency lasers with wavelengths greater than 1 mm, pumping of 1064 nm optical parametric oscillators (OPOs), and quasi-phase-matching (QPM) devices.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Chemical formula | LiNbO₃ |
| Crystal Structure | Trigonal crystal system |
| Space group | R3C |
| Density | 4.64 g/cm³ |
| Mohs hardness | 5 |
| Optical homogeneity | ~ 5 x 10⁻⁵ / cm |
| Transparency range | 420 – 5200 nm |
| Absorption coefficient [@1064 nm] | ~ 0.1 % / cm @ 1064 nm |
| Refractive index at 1064 nm [@1300 nm] | nₑ = 2.146, nₒ = 2.220 @ 1300 nm |
| Refractive index at 1064 nm [@1064 nm] | nₑ = 2.156, nₒ = 2.232 @ 1064 nm |
| Refractive index at 1064 nm [@632.8 nm] | nₑ = 2.203, nₒ = 2.286 @ 632.8 nm |
| Sellmeier equation (λ, μm) | nₒ² = 4.9048 + 0.11768 / (λ² – 0.04750) – 0.027169λ² |
| Sellmeier equation (λ, μm) | nₑ² = 4.5820 + 0.099169 / (λ² – 0.04443) – 0.021950λ² |
| Coefficient of thermal expansion [@25°C] | //a, 2.0 x 10⁻⁶ / K |
| Coefficient of thermal expansion [@25°C] | //c, 2.2 x 10⁻⁶ / K |
| Thermal conductivity [@25 °C] | ~ 5 W/m/K @ 25 °C |
| Thermo-optic coefficient dnₒ/dT [@1.4 µm] | dnₒ/dT = -0.874 x 10⁻⁶ / K @ 1.4 µm |
| Thermo-optic coefficient dnₑ/dT [@1.4 µm] | dnₑ/dT = 39.073 x 10⁻⁶ / K @ 1.4 µm |
| NLO coefficient d₃₃ | d₃₃ = 34.4 pm/V |
| NLO coefficient | d₃₁ = d₁₅ = 5.95 pm/V |
| NLO coefficient d₂₂ | d₂₂ = 3.07 pm/V |
| Efficiency NLO coefficient | deff =5.7 pm/V or ~14.6 x d₃₆ (KDP) for frequency doubling 1300 nm; |
| Efficiency NLO coefficient [@1064 nm；@ 1064 nm;] | deff =5.3 pm/V or ~13.6 x d₃₆ (KDP) for OPO pumped @ 1064 nm; |
| Efficiency NLO coefficient | deff =17.6 pm/V or ~45 x d₃₆ (KDP) for quasi-phase-matched structure. |
| Electro-optic coefficient | gT₃₃ = 32 pm/V, gS₃₃ = 31 pm/V, |
| Electro-optic coefficient | gT₃₁ =10 pm/V, gS₃₁=8.6 pm/V, |
| Electro-optic coefficient | gT₂₂ = 6.8 pm/V, gS₂₂= 3.4 pm/V, |
| Half-wave voltage, DC - electric field || z, light ⊥ z | 3.03 KV |
| Half-wave voltage, DC - electric field || x or y, light || z | 4.02 KV |
| Half-Wave Voltage ， DC - Damage Threshold | 100 MW/cm² (10 ns, 1064nm) |
| Operating wavelength Range | 1.525-1.605μm |
| Extinction ratio | ＜20dB |
| Half-Wave Voltage | ＜6V |
| DC Bias voltage | ＜8V |
| Input Characteristics Impedance | 50Ω |
| Optical reflection | ≤-50dB |
| Max Input Power | 20dBm |
| Max Input Optical power | 10-100mW |
| Storage temperature | -40-85℃ |
| Operating Temperature | -40-70℃ |
Key Features
Datasheet
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