Nd:YVO4 Basic characteristics
Our Nd:YVO4 (neodymium-doped yttrium orthovanadate) crystal is a low-absorption laser crystal with excellent overall performance, developed and manufactured specifically for diode-pumped solid-state lasers.
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Overview
Our Nd:YVO4 (neodymium-doped yttrium orthovanadate) crystal is a low-absorption laser crystal with excellent overall performance, developed and manufactured specifically for diode-pumped solid-state lasers.
Specifications
| Parameter | Value |
|---|---|
| Basic Properties - Crystal Structure | Tetragonal Crystal System |
| Basic Properties - Unit Cell Parameters | a = b = 7.1193 Å,c = 6.2892 Å |
| Basic Properties - Density | 4.22 g/cm³ |
| Basic Properties-Atomic Density [Atomic density at an Nd doping concentration of 1.0%.] | 1.26×10²⁰ at/cm³ |
| Basic Properties - Mohs Hardness [Similar to Glass] | 4 - 5 Mohs |
| Basic Characteristics - Thermal Expansion Coefficient [27℃] | αₐ = 4.43×10⁻⁶/K,αc = 11.37×10⁻⁶/K |
| Basic Characteristics - Thermal Conductivity [27℃] | //C:5.23 W/m/K;⊥C:5.10 W/m/K |
| Basic Properties - Thermo-Optic Coefficient [27℃] | dn₀/dT = 8.5×10⁻⁶/K,dnₑ/dT = 2.9×10⁻⁶/K |
| Basic Properties - Laser Wavelength | 1064 nm,1342 nm |
| Basic Properties-Stimulated Emission Cross Section [@1064 nm] | 25×10⁻¹⁹ cm²@1064 nm |
| Basic Properties-Fluorescence Lifetime [Fluorescence Lifetime at 1% Nd Doping] | 90 μs |
| Basic Properties-Absorption Coefficient [@810 nm] | 31.4 cm⁻¹@810 nm |
| Basic Properties-Intrinsic Loss [@1064 nm] | 0.02 cm⁻¹@1064 nm |
| Basic Properties - Gain Bandwidth [@1064 nm] | 0.96 nm@1064 nm |
| Basic Properties - Conversion Efficiency | >60% |
Applications
Our Nd:YVO4 crystals support diverse laser markets; combined with doubling crystals, they efficiently yield all-solid-state green, blue, and red output for color displays/precision lithography. Compact single-longitudinal-mode Nd:YVO4 diode-pumped lasers increasingly replace conventional water-cooled ion/lamp-pumped systems in consumer electronics, industrial lasers, and scientific instruments, supporting technology/industrial upgrades.
Key Features
Broad absorption/large stimulated-emission cross-section efficiently converts pump energy; low absorption/high laser-damage threshold supports stable high-power life. Good conductivity removes heat, preventing degradation and reducing service costs. Efficient small crystals enable compact lasers; uniaxial structure emits linear polarization without added polarization optics, simplifying paths. Nd:YVO₄ absorption curve.
Datasheet
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Supplier Information
Jingzhi Optoelectronics is a high-tech enterprise focusing on the R&D and production of optoelectronic materials and core devices. Aiming to break through the "bottleneck" technologies of high-end laser crystal materials and devices, the company is committed to achieving domestic substitution of key materials in fields such as semiconductor lithography and precision micromachining. Its main products include magneto-optical crystals (KTF, CeF₃), deep ultraviolet nonlinear optical crystals (modified BBO, CLBO), and high-power laser isolators, which are widely used in high-power laser systems, semiconductor lithography, EUV light sources, laser detection, defense, and new energy fields.
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