CLBO Crystal Basic characteristics
CLBO, or cesium lithium borate crystal (CsLiB₆O₁₀), is a high-performance new nonlinear optical crystal. Its broad transmission range, high nonlinear coefficient, wide spectral and temperature acceptance bandwidths, and absence of second-harmonic absorption make it outstanding for high-power laser frequency conversion and deep-ultraviolet generation.
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Overview
CLBO, or cesium lithium borate crystal (CsLiB₆O₁₀), is a high-performance new nonlinear optical crystal. Its broad transmission range, high nonlinear coefficient, wide spectral and temperature acceptance bandwidths, and absence of second-harmonic absorption make it outstanding for high-power laser frequency conversion and deep-ultraviolet generation.
Specifications
| Parameter | Value |
|---|---|
| Basic Properties - Crystal Structure | Tetragonal Crystal System |
| Basic Properties - Unit Cell Parameters [Room temperature] | a = b = 10.494 Å,c = 8.939 Å(1 Å = 10⁻¹⁰m) |
| Basic Properties-Symmetry | Z=4 |
| Basic Properties-Melting Point | approximately 844.5℃ |
| Basic Properties - Mohs Hardness | 5.5 |
| Basic Properties - Density [Room temperature] | 2.461 g/cm³ |
| Basic Properties-Thermal Conductivity (Room Temperature) [Room temperature] | 1.25 W/m K |
| Basic Properties-Transmission Band | 175 nm~2750 nm |
| Basic Properties - Damage Threshold | 26 GW/cm² |
| Basic Properties-Thermo-Optic Coefficient (Room Temperature) [Room temperature] | dno/dT=-1.9*10⁻⁶/℃;dne/dT=-0.5*10⁻⁶/℃ |
| Basic Properties-Absorption Coefficient (Room Temperature) | 266 nm (ultraviolet): <0.05 cm⁻¹. 532 nm~1064 nm (visible to near-infrared): <0.01 cm⁻¹. |
| Basic Properties-Refractive Index | 1064nm: ne = 1.4340, no = 1.4838;532nm: ne = 1.4445, no = 1.4971 |
| Basic Properties-Walk-Off Angle [@ 1064 nm,1.83°@ 532 nm,0.98°@ 488 nm] | 1.78°@ 1064 nm,1.83°@ 532 nm,0.98°@ 488 nm |
| Basic Properties-Angular Acceptance (Angular Bandwidth) | Approximately 0.5~1 mrad・cm, using 266 nm fourth-harmonic generation as an example |
| Basic Properties-Nonlinear Optical Coefficient | deff(Ⅰ)=d36sinθmsin(2Ф);deff(Ⅱ)=d36sin(2θm)sin(2Ф) |
| Basic Properties-Sellmeier Equation (λ in μm) [25℃] | no2 = 2.2104+0.01018/(λ2-0.01424)-0.01258λ2;ne2 = 2.0588+0.00838/(λ2-0.01363)-0.00607λ2 |
Applications
I. Semiconductors: CLBO provides 193nm/266nm harmonic output and a cutoff as low as 180nm, suiting lithography and inspection. UV generated with CLBO precisely processes chips to improve integration and performance. II. Materials: High damage threshold, low absorption and no two-photon absorption suit high-power systems. Fine cutting, etching and modification without damage to surrounding material support electronics and tiny component processing. III. Biomedicine: Efficient UV generation supports diagnostics. Its distinctive wavelength is described as penetrating tissue more deeply with greater clarity, providing detailed images for timely diagnosis, such as small tumors and vascular abnormalities. IV. UV radar: CLBO suits target detection and environmental monitoring, improving precision and recognition through its UV output.
Key Features
High-quality large CLBO crystals grown with controlled environment/parameters to suppress moisture effects and inclusions/stress, improving homogeneity and laser-damage threshold; high-power Nd:YAG fourth/fifth harmonics and deep-UV optical parametric conversion.
Datasheet
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Supplier Information
Jingzhi Optoelectronics is a high-tech enterprise focusing on the R&D and production of optoelectronic materials and core devices. Aiming to break through the "bottleneck" technologies of high-end laser crystal materials and devices, the company is committed to achieving domestic substitution of key materials in fields such as semiconductor lithography and precision micromachining. Its main products include magneto-optical crystals (KTF, CeF₃), deep ultraviolet nonlinear optical crystals (modified BBO, CLBO), and high-power laser isolators, which are widely used in high-power laser systems, semiconductor lithography, EUV light sources, laser detection, defense, and new energy fields.
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