TO Packaged Semiconductor Laser QTO0-940-080-311
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Specifications
| Parameter | Value |
|---|---|
| Output Power Po [Power, wavelength and other specifications are tested at a laser baseplate temperature of 25℃ in QCW(40% 1kHz) mode.] | min:8.0 W |
| Center wavelength λ0 [Power, wavelength and other specifications are tested at a laser baseplate temperature of 25℃ in QCW(40% 1kHz) mode.] | min:935 nm；typical:938 nm；max:940 nm |
| Spectral width (FWHM) Δλ | typical:3.0 nm |
| Wavelength Drift Coefficient Δλ/ΔT [Power, wavelength and other specifications are tested at a laser baseplate temperature of 25℃ in QCW(40% 1kHz) mode.] | typical:0.3 nm/℃ |
| Slow axis Divergence angle (FWHM) θ∥ [Fast/Slow-Axis Beam Angles Tested in QCW(3.8A 30% 1kHz) Mode] | typical:8 Deg |
| Fast axis Divergence angle (FWHM) θ⊥ [Fast/Slow-Axis Beam Angles Tested in QCW(3.8A 30% 1kHz) Mode] | min:7 Deg；typical:8 Deg；max:9.5 Deg |
| Slow-Axis Offset Angle @40cm | max:0.5 Deg |
| Fast-Axis Offset Angle @40cm | max:1 Deg |
| Emitting Region Width W | typical:94 μm |
| Operating current Iop | typical:7.8 A；max:8.0 A |
| Operating voltage Vop | typical:1.75 V；max:2.0 V |
| Threshold current Ith | typical:0.6 A；max:0.8 A |
| Slope efficiency η | min:1.00 W/A；typical:1.05 W/A |
| Electro-Optical Efficiency ηTOT | typical:55 % |
| ESD Vesd | max:500 V |
| Overall dimensions | See accompanying figure |
| Welding Temperature Tls [<5 s] | 260℃ <5 s |
| Operating temperature Top | 15 ～ 30 ℃ |
| Relative Humidity Hop | Non-condensing |
| Storage temperature TSTG | -20 ～ 80 ℃ |
| θ⊥:θ∥ [Fast- and slow-axis beam angles tested in QCW (3.8A 30% 1kHz) mode; +/-0.1] | 1.1+/-0.1 |
Applications
Key Features
Datasheet
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Supplier Information
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