RFoG 1550nm BOSA Module BLBD-PSA
Specification Snapshot
Storage Temperature Tstg [Absolute Maximum Ratings; Tc=25℃]
-40~+85 ℃
Operating Temperature Topr [Absolute Maximum Ratings; Tc=25℃]
-20~ +70 ℃
Threshold Current Ith [Transmitter Optical and Electrical Characteristics; Tc=25℃; CW, T=25℃]
min:3 mA;max:15 mA
Threshold Current Ith [Transmitter Optical and Electrical Characteristics; Tc=25℃; CW, T=85℃]
max:50 mA
Forward Voltage Vop [Transmitter Optical and Electrical Characteristics; Tc=25℃]
typical:1.2 V;max:1.5 V
Center Wavelength λc [Transmitter Optical and Electrical Characteristics; Tc=25℃; CW, Po= Pf]
min:1307 nm;typical:1310 nm;max:1313 nm
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Specifications
| Parameter | Value |
|---|---|
| Reverse Voltage(LD) Vr(LD) [Absolute Maximum Ratings; Tc=25℃; CW] | 2 V |
| Forward Current(LD) If(LD) [Absolute Maximum Ratings; Tc=25℃; CW] | 120 mA |
| Reverse Voltage(MPD) Vr(PD) [Absolute Maximum Ratings; Tc=25℃; CW] | 15 V |
| Forward Current(MPD) If(PD) [Absolute Maximum Ratings; Tc=25℃; CW] | 2 mA |
| Storage Temperature Tstg [Absolute Maximum Ratings; Tc=25℃] | -40~+85 ℃ |
| Operating Temperature Topr [Absolute Maximum Ratings; Tc=25℃] | -20~ +70 ℃ |
| Lead Soldering Temperature/Time Ts [Absolute Maximum Ratings; Tc=25℃] | 260/10 ℃/S |
| Fiber Yield Strength [Absolute Maximum Ratings; Tc=25℃] | 1 kgf |
| Fiber Bend Radius [Absolute Maximum Ratings; Tc=25℃] | 30 mm |
| Threshold Current Ith [Transmitter Optical and Electrical Characteristics; Tc=25℃; CW, T=25℃] | min:3 mA;max:15 mA |
| Threshold Current Ith [Transmitter Optical and Electrical Characteristics; Tc=25℃; CW, T=85℃] | max:50 mA |
| Forward Voltage Vop [Transmitter Optical and Electrical Characteristics; Tc=25℃] | typical:1.2 V;max:1.5 V |
| Optical Output Power Center Wavelength Po [Transmitter Optical and Electrical Characteristics; Tc=25℃; If=23~27mA] | typical:2 mW |
| Center Wavelength λc [Transmitter Optical and Electrical Characteristics; Tc=25℃; CW, Po= Pf] | min:1307 nm;typical:1310 nm;max:1313 nm |
| Rise time/Fall time (20-80%) Tr/Tf [Transmitter Optical and Electrical Characteristics; Tc=25℃; If=Ith,Po=Pf, 50 Ohm] | max:120 pS |
| Monitor Current lm [Transmitter Optical and Electrical Characteristics; Tc=25℃; CW, If=Ith+20mA] | min:100 uA;max:1000 uA |
| Capacitance CPD [Transmitter Optical and Electrical Characteristics; Tc=25℃; VRD=5V,F=1MHz] | typical:10 PF;max:15 PF |
| Dark Current Id [Transmitter Optical and Electrical Characteristics; Tc=25℃; VRD=5V] | max:100 |
| Spectral Width(RMS-20dB) △λ [Transmitter Optical and Electrical Characteristics; Tc=25℃; CW, If=Ith+20mA] | typical:0.5 nm;max:1 nm |
| Bandwidth BW [Transmitter Optical and Electrical Characteristics; Tc=25℃] | min:2 GHz |
| Slope Efficiency SE [Transmitter Optical and Electrical Characteristics; Tc=25℃; CW, If=Ith+20mA] | min:0.09 W/A |
| Tracking Error TE [Transmitter Optical and Electrical Characteristics; Tc=25℃; CW, Im=Constant & If=Ith+20mA] | min:-1.5 dB;max:1.5 dB |
| Isolation ISO [Transmitter Optical and Electrical Characteristics; Tc=25℃] | min:30 dB |
| Side Mode Suppression Ration SMSR [Transmitter Optical and Electrical Characteristics; Tc=25℃; CW, If=Ith+20mA] | min:30 dB |
| Composite second-order Beat CSO [Transmitter Optical and Electrical Characteristics; Tc=25℃; 2 tone test, f1=2200MHz, f2=2202.5MHz, OMI=20%/tone,] | max:-50 dBc |
| Composite triple beat Distortion CTB [Transmitter Optical and Electrical Characteristics; Tc=25℃; 2 tone test, f1=2200MHz, f2=2202.5MHz, OMI=20%/tone,] | max:-60 dBc |
| Relative Intensity Noise RIN [Transmitter Optical and Electrical Characteristics; Tc=25℃] | max:-134 dB/Hz |
| Detection range Iso(1510>20dB) λ [Receiver Optical and Electrical Characteristics; Tc=25℃] | min:1540 nm;typical:1550 nm;max:1560 nm |
| Responsivity Res [Receiver Optical and Electrical Characteristics; Tc=25℃; V_R=5V,λ=1550nm] | min:0.85 A/W |
| Dark current Id [Receiver Optical and Electrical Characteristics; Tc=25℃; V_R=5V] | max:1.0 |
| Bandwidth(-3dB) BW [Receiver Optical and Electrical Characteristics; Tc=25℃] | min:2 GHz |
| Saturation power P [Receiver Optical and Electrical Characteristics; Tc=25℃] | min:3 dBm |
| Capacitance C [Receiver Optical and Electrical Characteristics; Tc=25℃; V_R=5V] | typical:0.6 pF;max:1.0 pF |
| Rise and Fall time Tr/Tf [Receiver Optical and Electrical Characteristics; Tc=25℃; RL=50Ω] | typical:0.1 ns |
| IMD2 [Receiver Optical and Electrical Characteristics; Tc=25℃; λ=1550 nm] | typical:-70 dBc |
| IMD3 [Receiver Optical and Electrical Characteristics; Tc=25℃; λ=1550 nm] | typical:-80 dBc |
| Reverse Voltage V_R [Receiver Optical and Electrical Characteristics; Tc=25℃] | max:30 V |
| Return Loss RL [Receiver Optical and Electrical Characteristics; Tc=25℃; λ=1550nm] | min:40 dB |
Applications
CDMA/GSM transmission system CATV Return-path Other analog transmission system
Key Features
High-Reliability DFB Laser Chips 1550nm InGaAs PIN-PD as Receiver Low noise, Low distortion Low threshold current Integrated Optical Isolator
Datasheet
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Supplier Information
Xiamen Bely Information Technology Co., Ltd., located in Xiang'an Park, Xiamen Torch Hi-Tech Industrial Development Zone, is a high-tech enterprise specializing in R&D, manufacturing, and sales of optical active and passive devices and network equipment for fiber optic communications and sensing/ranging applications.
Guided by a "People-Oriented, Continuous Innovation" philosophy, the company has assembled a team of experts with extensive experience in optical device research, establishing automated chip packaging and device coupling production lines to deliver high-quality, cost-effective optoelectronic components. Our products serve diverse markets including broadcasting, mobile and satellite communications, broadband and data centers, security surveillance, instrumentation, autonomous driving, and medical aesthetics.
The company is certified to ISO 9001 Quality Management, ISO 14001 Environmental Management. Belycomm holds 7 invention patents and over 140 utility model patents. Since its establishment, the company has been recognized as an Xiamen Innovative (Pilot) Enterprise, Xiamen Specialized and Innovative Enterprise, National High-Tech Enterprise, and National Technology-Based SME.
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