500μm InGaAs Photodiode TO46 500-B-5.7-X-X
Coaxial Photodiode Devices
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Overview
Specifications
| Parameter | Value |
|---|---|
| Operating Temperature Top [Absolute Maximum Ratings; Tc=25℃] | min:-40 ℃；max:+85 ℃ |
| Storage Temperature Tstg [Absolute Maximum Ratings; Tc=25℃] | min:-40 ℃；max:+100 ℃ |
| Lead Soldering Temperature Ts [Absolute Maximum Ratings; Tc=25℃] | max:260 ℃ |
| APD voltage supply VPD [Absolute Maximum Ratings; Tc=25℃] | max:0.95×VBR |
| Forward current IF [Absolute Maximum Ratings; Tc=25℃] | max:1 mA |
| Active Area Φ [Transmitter Optical and Electrical Characteristics; Tc=25℃] | typical:500 μm |
| Optical Wavelength Range λ [Transmitter Optical and Electrical Characteristics; Tc=25℃] | min:400 nm；max:1100 nm |
| Dark Current Id [Transmitter Optical and Electrical Characteristics; Tc=25℃; M=100] | max:1 |
| Responsibility Resp [Transmitter Optical and Electrical Characteristics; Tc=25℃; φe=1μw,M=100, λ=905nm] | min:50 A/W |
| Response time Ts [Transmitter Optical and Electrical Characteristics; Tc=25℃; f=1MHz,RL=50Ω, λ=905nm] | max:1.5 ns |
| Junction Capacitance CJ [Transmitter Optical and Electrical Characteristics; Tc=25℃; M=100, f=1MHz] | typical:1.2 PF |
| Reverse breakdown voltage VBR [Transmitter Optical and Electrical Characteristics; Tc=25℃; IR=10uA] | min:130 V；max:220 V |
| Distance between refrence plane to fiber L [Transmitter Optical and Electrical Characteristics; Tc=25℃] | min:5.4 mm；typical:5.7 mm；max:6.0 mm |
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