200μm A-5.7 InGaAs APD TO46 BLAPD-PFA1-2HBR-M(Si-50/125)
Coaxial Photodiode Devices
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Overview
Specifications
| Parameter | Value |
|---|---|
| Forward Current If [Absolute Maximum Ratings; Tc=25℃] | typical:0.25 mA；max:1 mA |
| APD Supply Voltage VPD [Absolute Maximum Ratings; Tc=25℃] | max:Vbr |
| Operating Case Temperature Top [Absolute Maximum Ratings; Tc=25℃] | min:-40 ºC；max:+85 ºC |
| Storage Temperature Tstg [Absolute Maximum Ratings; Tc=25℃] | min:-40 ºC；max:+85 ºC |
| Lead Soldering(Temperature/Time) [Absolute Maximum Ratings; Tc=25℃] | typical:260/10 |
| Operating Wavelengt λ [Tc=25℃] | min:400 nm；max:1100 nm |
| Responsivity R [Tc=25℃; λ=850nm,φe=1μw] | min:0.4 A/W；typical:0.45 A/W |
| Dark Current Id [Tc=25℃; V=0.9Vbr] | max:1 |
| Total Capacitance C [Tc=25℃; M=100,f=10KHz] | typical:1.5 pF |
| Reverse breakdown voltage Vbr [Tc=25℃; Id=10uA] | min:80 V；max:100 V |
| Optimum Gain M [Tc=25℃] | typical:100 |
Applications
Key Features
Datasheet
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