Yb:YAG
High slope efficiency, high optical mass, high heat conductivity; high mechanical strength, no-mobilization absorption and upward conversion, heat load per unit pump power compared to Nd; low YAG crystals, approximately 8 nm @940nm absorbent bandwidth of diode pump, suitable for commonly used high power IngaAs laser diode (wavelength 940nm or 970nm) pumps
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Overview
Specifications
| Parameter | Value |
|---|---|
| Growth direction | ＜111＞±5° |
| Flat | ＜λ/10 |
| Parallel degrees | ≤10″ |
| Vertical | ≤5′ |
| Surface lightliness | 10/5 (MIL-O-13830A) |
| Impairment threshold | ≥700MW/CM^2, 10ns, 1HZ |
| Photoenergy | 1.9310ˉ19 J (@1030nm) |
| Range of launch lines | 9nm |
| Fluorescent lifetime | 1.2ms |
| Diode pump absorbs wavelength | 940nm or 970nm |
| The pump absorbs broadband | 10nm |
| Refraction Rate | 1.82@1030nm |
| Loss factor | 0.003 cm-1 |
| Crystal Structure | Cubic |
| Crystal Constant | 12.01A |
| Morse Hardness | 8.5 |
| Density | 4.56+ /- 0.04g/cm3 |
| Hot | 0.59J/g.cm3 |
| Flexible Mode | 310GPa |
| Yang mode | 3.17104Kg/mm2 |
| Persumy | 0.3(est.) |
| Resistance intensity | 0.13~0.26GPa |
| Heat swelling factor | {100}Direction:8.210-6K(0~250°C); {100}Direction: 7.710-6/K(0~250°C); {100}Direction:7.810-6/K(0~250°C) |
| Thermal impact | 790W/m |
| Heat conductivity | 14w/m/K@20°C; 10.5W/m/K@100°C |
| Thermal light factor | 7.310-6/K |
Datasheet
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