Ti:sapphire(Ti:Al2O3)
Titanium-doped sapphire (Ti:Sapphire) is widely used in high-output-power, high-gain, broadband tunable ultrashort-pulse lasers. Zhongce uses the temperature gradient technique (TGT) growth method to provide large-size (diameter 120×80 mm^2) high-quality crystals with low light scattering and low dislocation density (<102 cm^-2), grown along the [0001] orientation, with high doping concentration, high gain and high laser damage threshold.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Molecular Formula | Ti3+:Al2O3 |
| Crystal Structure | Hexagonal crystal system |
| Melting Point | 2040 ℃ |
| Mohs Hardness | 9 Mohs |
| Thermal Conductivity | 52 W/m/k |
| Specific Heat | 0.42 J/g/K |
| Laser Generation | Four-level |
| Wavelength Tuning Range | 660-1050 nm |
| Absorption Range | 400-600 nm |
| Emission Peak | 795 nm |
| Absorption Peak | 488 nm |
| Refractive Index | 1.76 @ 800 nm |
| Peak Cross Section | 3~4×10^-19 cm^2 |
| Coefficient of Thermal Expansion | 8.40×10^-6 /℃ |
| Pointing | The C-axis is the optical axis direction, which is perpendicular to the crystal surface |
| Ti2O3 Concentration | 0.06-0.26 at.% |
| Quality Factor | 100~250 units (products >250 customizable) |
| Diameter | 2~30 mm (customizable) |
| Optical Path Length | 2~30 mm (customizable) |
| End Face | Two parallel planes or Brewster cuts at both ends |
| Flatness | ≤λ/8 @ 633 nm |
| Transmitted Wavefront Distortion | ≤λ/4 @ 633 nm |
| Parallelism | 20" |
| Perpendicularity | ≤15′ |
Applications
Datasheet
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Supplier Information
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