TO9 Device
High-Power Semiconductor Laser Step, Application, Package, 500mW-1W ( CW ) 6W-140W( ) TO56 Package Device, High-Power TO9 Package Device, 638nm/665nm/808nm/940nm/1470nm/1550nm Wave
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660 nm 120 mW TO56 for red light lasers
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795 nm without magnetic encapsulation laser
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940 nm3JVCSEL7070 lasers
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Prefabricated tin
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Gold tin film welds: Au/Sn=70~80/30~20 Membrane thickness: 3 micro, 5 micro Weld temperature: 290~320℃
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