Low-Capacitance Large-Area InGaAs PIN Photodiode Chip Series OVQT-LC3
The low-capacitance large-area InGaAs PIN photodiode chip series uses a front-illuminated planar
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Overview
Specifications
| Parameter | Value |
|---|---|
| Photosensitive Area Size | Typ φ3mm |
| Response Time - Test Condition: standard | Typ 35ns |
| -3 dB Bandwidth - Test Condition: standard | Typ 10MHz |
| Reverse Breakdown Voltage - Test Condition: standard | Min 10V |
| Dark Current - Test Condition: standard | Typ 5nA |
| Response Time - Test Condition: low capacitance | Typ 17ns |
| -3 dB Bandwidth - Test Condition: low capacitance | Typ 20MHz |
| Reverse Breakdown Voltage - Test Condition: low capacitance | Min 10V |
| Dark Current - Test Condition: low capacitance | Typ 15nA |
| Capacitance - Test Condition: standard, 1V | Typ 300pF |
| Capacitance - Test Condition: low capacitance, 1V | Typ 180pF |
| Capacitance - Test Condition: standard, 5V | Typ 200pF |
| Capacitance - Test Condition: low capacitance, 5V | Typ 100pF |
| Capacitance - Test Condition: standard, 25V | Typ 170pF |
| Capacitance - Test Condition: low capacitance, 25V | Typ 90pF |
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Key Features
Datasheet
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