808nm 8W 光纤耦合半导体激光器 K808DB2RN-8.000W
The K808DB2RN-8.000W from BWT is an 808nm 8W fiber-coupled semiconductor laser diode. It delivers 8W of output power through a 105μm core / 125μm cladding multimode optical fiber with a 0.22 numerical aperture, 1.5m fiber length and a standard SMA905 connector. Featuring a high electro-optical conversion efficiency of 46%, a low threshold current of 1.8A, and built-in optical feedback isolation of 30dB over the 1020-1200nm band to protect the laser chip from back-reflected light, this compact 2-pin module is a reliable and efficient pump source for solid-state lasers, as well as for medical and material processing applications.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Output Power Po (W) | ≥8 |
| Center Wavelength λc (nm) | 808±3 |
| Spectral Width (FWHM) Δλ (nm) | 6 |
| Wavelength Temperature Coefficient Δλ/ΔT (nm/℃) | 0.3 |
| Electro-Optical Conversion Efficiency PE (%) | 46 |
| Threshold Current Ith (A) | 1.8 |
| Operating Current Iop (A) | 9(Typ.), 11(Max.) |
| Operating Voltage Vop (V) | ≤2 |
| Slope Efficiency η (W/A) | 1 |
| Fiber Core Diameter Dcore (μm) | 105 |
| Cladding Diameter Dclad (μm) | 125 |
| Numerical Aperture NA | 0.22 |
| Fiber Length Lf (m) | 1.5 |
| Fiber Jacket (mm) | 0.9 |
| Bending Radius (mm) | ≥50 |
| Fiber Connector | SMA905 |
| Anti-Reflection Wavelength Range λ (nm) | 1020-1200 |
| Anti-Reflection Isolation (dB) | 30 |
| ESD Vesd (V) | ≤500 |
| Storage Temperature Tst (℃) | -20~70 |
| Soldering Temperature Tls (℃) | ≤260 |
| Soldering Time t (sec) | ≤10 |
| Operating Temperature Top (℃) | 15~35 |
| Relative Humidity RH (%) | 15~75 |
| Pin 1 Definition | 激光器(+)/Laser(+) |
| Pin 2 Definition | 激光器(-)/Laser(-) |
| Mounting Holes (mm) | 2×Φ2.6 |
| Test Conditions | 8W@25℃ |
Applications
Key Features
Datasheet
Supplier Information
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