High-Precision Crystal Bonding Equipment

size: 35 mm x18 mm x5.5 mm, Smaller Output Power: >4dBm Power Consumption: <2w

Mini EDFA series, its main features are small size and low power.

Stage format: 310 mm × 310 mm X-axis working stroke: 0-600 mm Y1, Y2 axis working stroke: 0-500mm

● Wafer cutting equipment using high-precision bidirectional silent air spindle:; ● Cutting area: 4 inch, 6 inch wafers;; ● High precision: for resin substrates with irregular expansion and contraction, high-precision processing is possible through cutting line calibration at multiple points;; ● Simple and convenient operation: 17-inch touch screen;; ● Automatic blade mark calibration function: automatically measures the offset of the cutting street and the width of the cutting mark, managing processing quality;; ● Blade breakage detection function: blade breakage detection during cutting.; ● 4/6 inch IC, wafer cutting; ● Silicon, quartz, aluminum oxide, iron oxide, gallium arsenide, sapphire, glass, etc.

Stage format: ∅300 mm X-axis working stroke: 0-770mm Y1, Y2 axis working stroke: 0-470mm

Large-scale package substrate cutting equipment using opposed, high-precision bidirectional silent air spindles:; ● High production efficiency: basket loading, automatic loading/unloading + automatic cutting + automatic cleaning functions;; ● High precision: for resin substrates with irregular stretchable materials, high-precision processing is possible through multi-point cutting line calibration;; ● Simple and convenient operation: 19-inch touch screen;; ● Automatic calibration function: calibration can be performed by selecting recorded workpiece data;; ● Automatic blade mark calibration function: automatically measures the offset of the cutting street and the width of the cutting mark, managing processing quality;; ● More complete functions: supports diverse full-cut/half-cut processes, a more advanced ∅300mm format cutting machine.; ● Large-scale package substrates; ● IC, LED, QFN, etc.; ● Silicon, quartz, alumina, iron oxide, gallium arsenide, sapphire and glass, etc.

Power: High power and High gain Gain ripple [typ. condition]: <1.0dB typ. condition NF [for typ. C Condition]: <6.0dB for typ. C Condition

Normal-type EDFA, including single-wave, multi-wave, pure optical, and powered EDFA, with dimensions above 90*70*15mm, can achieve higher gain and larger power output.

Variable Gain Range: >10dB Power: >18dBm Gain ripple [typ. condition]: <1.0dB typ. Condition

Normal-type EDFA, including single-wave, multi-wave, pure optical, and powered EDFA, with dimensions above 90*70*15mm, can achieve higher gain and larger power output.