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Photonics Source provides 4 products. Download datasheets, request quotes, and compare function, price, and availability.
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High-performance silicon wafers
Wafer Size: 150-200mm Resistivity Range: <0.001Ω·cm to >10kΩ·cm Device Layer Thickness: 1μm to >200μm Buried Oxide Layer Thickness: 0.3μm to 4μm Handle Wafer Thickness: 300μm to 950μm -
High-performance silicon wafers
Wafer Size: 150-200mm Resistivity Range: <0.001Ω·cm to >10kΩ·cm Device Layer Thickness: 1.0μm to >200μm Buried Oxide Layer Thickness: 0.3μm to 4μm Handle Wafer Thickness: 300μm to 950μm -
YBHTOL-1000 High-Temperature Operating Life Test Platform
Maximum Input Voltage: DC-1000V Single Channel Peak Current: 10A Maximum Input Power: 100W×4 Gate Resistance: Inductance-free round resistance Load Resistance: 100Ω power resistance -
MEMS Variable Optical Attenuator
Laser Wavelength (nm): 1310/1550 Assembly Type: Optical dynamic attenuation Attenuation Range (dB): >=30 Insertion Loss (dB): ≤0.7 Clear Light Ratio (dB): >=20