40G High-Speed Indium Gallium Arsenide (InGaAs) Photodetector HSPD4040
HSPD4040 is a high-speed detector module for digital/analog applications. An InGaAs PIN photodiode responds over1250–1650nm with matching electronics. Maximum bandwidth is40GHz, supply+5V, input standard single-mode9/125μm fiber, and RF output a2.92mm connector matched to50ohms. A sealed housing weighs under20g. The description states ROHS2.0 compliance with restrictions on hazardous substances in electrical/electronic equipment. After nearly two years of R&D,广州瑞东 developed two fully domestic high-speed PD products described as exceeding18GHz and40GHz bandwidth. The18GHz version has rise time<20ps and the40GHz PD<8.5ps. Responsivity is described as matching or exceeding comparable Finisar/Thorlabs imports,with well-controlled tail ringing. Without a TIA,the detectors provide very low noise for high-speed communications and femtosecond-laser testing at high cost effectiveness. The company's independently developed linear supply meets research needs for these detectors.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Storage Temperature Range TSTG [Typical Values and Absolute Maximum Ratings] | typical:-45~+85; Rated: -55~+85 |
| Operating Case-Temperature Range TC [Typical Values and Absolute Maximum Ratings] | typical:25; Rated: -40~+85 |
| Bias Voltage VR [Typical Values and Absolute Maximum Ratings] | typical:5; Rated: 5~6 |
| Optical Input Power Pin [Typical Values and Absolute Maximum Ratings] | typical:+3; Rated: +10 |
| Burnout Optical Power PB [Typical Values and Absolute Maximum Ratings] | Rated Value: +15 |
| Lead Soldering Temperature Tp [Typical Values and Absolute Maximum Ratings] | typical:280 (10s); Rated: 330 (10s) |
| Response Spectrum λ [Optoelectronic Device Performance Parameters] | min:1000 nm; max:1650 nm |
| Small-Signal Bandwidth (-3dB) [Optoelectronic Device Performance Parameters] | min:35 GHz; typical:40 GHz |
| Maximum Optical Input Power Pm [Optoelectronic Performance at25°C/Normal Bias;Beyond Absolute Maximum May Impair Reliability or Cause Permanent Damage] | max:13 mW |
| Responsivity R [Optoelectronic Device Performance Parameters; Test Wavelengths λ=1310nm, 1550nm] | min:0.75 A/W; typical:0.85 A/W |
| Amplitude Flatness A [Optoelectronic Device Performance Parameters] | typical:±2 dB |
| Photodiode Bias Voltage Vpd [Optoelectronic Performance; Operation beyond Absolute Maximum Ratings May Impair Reliability or Permanently Damage Device] | typical:5 V; max:6 V |
| Output Voltage Standing Wave Ratio VSWR [Optoelectronic Device Performance Parameters] | typical:2.5; max:3 |
| Saturated RF Output Power Pout [Optoelectronic Device Performance Parameters] | typical:-10 dBm |
| Dark Current Id [Optoelectronic Device Performance Parameters] | typical:1 nA; max:40 nA |
| Output Impedance RL [Optoelectronic Device Performance Parameters] | typical:50 Ω |
| Notes [Ordering Information; HSPD4040] | 40GHz Photodetector Receiver with Single-Mode FC/APC Fiber Connector |
| Wavelength Range | 1000nm - 1700nm |
| 3dB Cutoff Bandwidth | ＞40GHz |
| Conversion Gain | 35V/W |
| Saturation Optical Power | 10mW |
| Rise Time [10% - 90%] | ＜8.5ps |
| Typical Maximum Responsivity [@1550nm] | ＞0.7A/W @1550nm |
| Output Reflection Coefficient [S22] | ＜-2dB |
| Amplitude Flatness | ＜±2dB |
| Maximum Output | 0.5V |
| Maximum Incident Power | 30mW |
| Detector Material / Type | InGaAs/PIN |
| Operating Temperature | -40℃~85℃ |
| Optical Input | FC/PC or (FC/APC) |
| Electrical Output | SMA or 2.92mm |
| Power Supply Requirements | +12V/100mA |
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Key Features
Datasheet
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Supplier Information
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