Deep-UV Optoelectronic Test System
Wide-/ultrawide-bandgap semiconductors are important successors to Si/GaAs for UV sources, national security, mobile communications, high-speed rail/power grids and new-energy vehicles, supporting industrial upgrading, energy savings and defense. Gallium oxide offers high voltage resistance/low cost for UV optoelectronics and power devices. Sensitive, low-false-alarm deep-UV detection serves missile warning, ozone inspection and flame sensing. Deep-UV spectroscopy probes electronic structure: fluorescence intensity/wavelength mapping reveals defects, uniformity and failures; lifetime reveals defects/impurities, recombination and carrier transport; temperature tests probe energy levels. Cooling reduces phonon scattering and freezes shallow levels, shifting fluorescence intensity/peaks. Mechanistic study guides growth/doping for better emission/detection. The source states no commercial time-/space-resolved deep-UV systems yet exist, only custom systems in leading groups. 度微光学's system uses a212.8nm picosecond laser with fluorescence/photocurrent modules, measuring spectra, mapping, lifetime and photocurrent-response spectra/mapping. Photocurrent covers170–2100nm, with high sensitivity over170–400nm. Stated system temperature range is-190 to400℃; stage travel160×160um and accuracy4nm. Interchangeable sources enter an incident spectrometer and microscope path; a lock-in amplifier, chopper and probe station measure photocurrent/mapping. A dual-exit emission spectrometer connects a CCD for fluorescence/mapping and single-photon detector for lifetime. Additional temperature-controlled probe/piezo stages provide4nm stage resolution and160um travel. The probe-station temperature range is separately stated as-190 to600℃, with linear heating/cooling at a stated0–10℃ rate, without a time unit.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Photocurrent Spectrum Measurement Range | 170 -2100 nm |
| Fluorescence Spectrum Measurement Range | 200 -1050 nm |
| Fluorescence Measurement Resolution | ＜250 nm |
| Fluorescence Lifetime Wavelength Measurement Range | 250 -700 nm |
| Fluorescence Lifetime Measurement Range | 100 ps-5 us |
| Mapping Range | 160 um × 160 um |
| Mapping Resolution | 4 nm |
| Test Ambient Temperature [Upgradeable to 600℃] | -190 - 400℃ (Upgradeable to 600℃) |
| Linear Heating/Cooling Rate | 0 -10℃ |
| Temperature Resolution | ±0.1℃ |
| Laser Wavelength [Other Wavelengths Optional] | 212.8 nm, 193 nm (Other Wavelengths Optional) |
Key Features
Datasheet
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