NPD1201T Chip
NPD1201T Array of12 High-Sensitivity Photosensors on PCB.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage / Collector-Emitter Breakdown Voltage BV_CEO [MAXIMUM RATINGS; Ta=25°C; Photoelectric Sensor of Each Cell] | 30 V |
| Emitter-Collector Voltage / Emitter-Collector Breakdown Voltage BV_ECO [MAXIMUM RATINGS; Ta=25°C; Photoelectric Sensor of Each Cell] | 6 V |
| Collector Current I_C [MAXIMUM RATINGS; Ta=25°C; Photoelectric Sensor of Each Cell] | 10 mA |
| Operating Temperature Topr. [MAXIMUM RATINGS; Ta=25°C; Photoelectric Sensor of Each Cell] | -20~80 °C |
| Storage Temperature Tstg. [MAXIMUM RATINGS; Ta=25°C; Photoelectric Sensor of Each Cell] | -30~100 °C |
| Soldering Temperature Tsol. [MAXIMUM RATINGS; Ta=25°C; Photoelectric Sensor of Each Cell; No More Than 5 Seconds at Solder Pads] | 260 °C |
| Photocurrent I_L [Electro-optical characteristics；Ta=25°C；E_v=1000Lux；V_CE=5V] | typical:2.5 mA; max:5 mA |
| Dark Current I_D [Electro-optical characteristics；Ta=25°C；V_CE=5V] | max:100 nA |
| Spectral Response λ [Electro-optical characteristics；Ta=25°C] | min:400 nm; max:1000 nm |
| Peak Photosensitivity Wavelength λ_p [Electro-optical characteristics；Ta=25°C] | typical:850 nm |
Applications
Key Features
Datasheet
Supplier Information
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