NPD2100
NPD2100 Array of Six High-Sensitivity Photosensors on PCB.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Reverse Voltage V_R [MAXIMUM RATINGS; Ta=25°C; Photoelectric Sensor of Each Cell] | 50 V |
| Operating Temperature Topr. [MAXIMUM RATINGS; Ta=25°C; Photoelectric Sensor of Each Cell] | -40~+100 °C |
| Storage Temperature Tstg. [MAXIMUM RATINGS; Ta=25°C; Photoelectric Sensor of Each Cell] | -40~+100 °C |
| Soldering Temperature Tsol. [MAXIMUM RATINGS; Ta=25°C; Photoelectric Sensor of Each Cell; No More Than 5 Seconds at Solder Pads] | 260 °C |
| Photocurrent I_L [Electro-optical Characteristics;Ta=25°C;Photosensor in Each Cell;E_v=1000Lux;V_R=5V;CIE Standard Illuminant A,2856K(Chinese Says Halogen Lamp/English Says Tungsten Lamp,Both Retained)] | typical:20 μA |
| Dark Current I_D [Electro-optical characteristics;Ta=25°C;Photoelectric Sensor in Each Cell;V_R=5V] | max:10 nA |
| Spectral Responsivity λ [Electro-optical characteristics; Ta=25°C; Photoelectric Sensor in Each Cell] | min:400 nm; max:1000 nm |
| Peak Photosensitivity Wavelength λ_p [Electro-optical characteristics; Ta=25°C; Photoelectric Sensor in Each Cell] | typical:850 nm |
| Capacitance C [Electro-optical characteristics;Ta=25°C;Photoelectric Sensor per Cell;V_R=10V;f=1KHz] | typical:10 pf |
| Effective Area λ [Electro-optical characteristics;Ta=25°C;Photoelectric Sensor per Cell;Sourceλ;Merged Min/Typ/Max Cell] | 2.6 mm² × 1.1 mm² |
Applications
Key Features
Datasheet
Supplier Information
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