α-Particle Detector ARD-C
This alpha-particle detector uses internally prepared compound-semiconductor crystals and low-dead-layer electrodes for efficient direct detection. CdTe, perovskite and InSiTeᴈ versions are selected by measurement area, device thickness, vacuum environment and system structure. Thin-window/windowless entrances integrate with vacuum chambers, sample stages, digital spectroscopy and multichannel arrays. Optimized surface electrodes, passivation and low-noise readout produce clear pulse-height spectra for source characterization, surface-contamination measurement and particle experiments. Alpha particles deposit energy over a short path and create many electron–hole pairs. A bias field rapidly collects carriers into charge pulses proportional to deposited energy. Low-noise preamplification and digital multichannel analysis yield counts/energy spectra. Thin windows, low dead layers and a stable surface field are key to energy response.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Detection Crystal | CdTe |
| Typical Energy Range | 0.06-10MeV |
| Typical Effective Area | 25 / 100mm² |
| Leakage Current [1000V/cm] | 1000V/cm 50nA/cm² |
| Typical Energy Resolution [FWHM @5.486MeV] | <=20% FWHM @5.486MeV |
| Equivalent Dead Layer | <=1 micrometer |
| Maximum Count Rate | >=5 x 10^4cps |
| Recommended Environment | Vacuum / Dry Gas |
| Output Form | Analog Pulse / USB Energy Spectrum |
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Key Features
Datasheet
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